 | | |
| PartNumber | SI7852DP-T1-E3 | SI7852DP-T1-GE3 |
| Description | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 |
| Manufacturer | Vishay | Vishay |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | - |
| Package / Case | PowerPAK-SO-8 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - |
| Id Continuous Drain Current | 12.5 A | - |
| Rds On Drain Source Resistance | 16.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 34 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 5.2 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | TrenchFET | TrenchFET |
| Packaging | Reel | Reel |
| Series | SI7 | SI7 |
| Transistor Type | 1 N-Channel | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 25 S | - |
| Fall Time | 31 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 11 ns | - |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | - |
| Typical Turn On Delay Time | 17 ns | - |
| Part # Aliases | SI7852DP-E3 | SI7852DP-GE3 |
| Unit Weight | 0.017870 oz | 0.017870 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7852DP-T1-E3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | |
| SI7852DP-T1-GE3 | MOSFET 80V Vds 20V Vgs PowerPAK SO-8 | ||
Vishay |
SI7852DP-T1-GE3 | RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V | |
| SI7852DP-T1-E3 | MOSFET N-CH 80V 7.6A PPAK SO-8 | ||
| SI7852DP | Nuevo y original | ||
| SI7852DP-T1 | MOSFET RECOMMENDED ALT 781-SI7852DP-E3 | ||
| SI7852DP-T1-E3. | Nuevo y original | ||
| SI7852DP-TI-E3 | Nuevo y original | ||
| SI7852DPT1 | Nuevo y original |