SI7852DP-T1-E3

Mfr. #:: SI7852DP-T1-E3
Fabricante:: Vishay
Descripción:: MOSFET N-CH 80V 7.6A PPAK SO-8
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI7852DP-T1-E3 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante: VISHAY

categoria de producto: FET - Single

Serie: TrincheraFETR

embalaje: Embalaje alternativo de Digi-ReelR

Alias de parte: SI7852DP-E3

Unidad de peso: 0.017870 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: PowerPAKR SO-8

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: PowerPAKR SO-8

Configuración: Único

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 1.9W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 80V

Entrada-Capacitancia-Ciss-Vds: -

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 7.6A (Ta)

Rds-On-Max-Id-Vgs: 16.5 mOhm @ 10A, 10V

Vgs-th-Max-Id: 2V @ 250μA (Min)

Puerta-Carga-Qg-Vgs: 41nC @ 10V

Disipación de potencia Pd: 1.9 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 11 ns

Hora de levantarse: 11 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 7.6 A

Vds-Drain-Source-Breakdown-Voltage: 80 V

Resistencia a la fuente de desagüe de Rds: 16.5 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 40 ns

Tiempo de retardo de encendido típico: 17 ns

Modo de canal: Mejora

Tags: SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7852DP-T1-E3 Descripción

***ure Electronics: Single N-Channel 80 V 16.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8

***et Europe: Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R

***ied Electronics & Automation: TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R

***i-Key: MOSFET N-CH 80V 7.6A PPAK SO-8

***ser: N-Channel MOSFETs 80V 12.5A 5.2W

***: N-CHANNEL 80-V (D-S) MOS

***ponent Electronics: IC SMT ON TAPE

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:80V; Continuous Drain Current, Id:12.5A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SO-8 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET,N CH,80V,7.6A,PPSO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):16.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.9W; Transistor Case Style:PowerPAK SO; No. of Pins:8; Current Id Max:7.6A; Package / Case:PowerPAK SO-8; Power Dissipation Pd:1.9W; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***nell: MOSFET, N SO-8 REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:80V; Current, Id Cont:7.6A; Resistance, Rds On:10.9ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2V; Case Style:SOIC PowerPAK; Termination Type:SMD; Current, Idm Pulse:50A; External Depth:5.26mm; External Length / Height:1.2mm; N-channel Gate Charge:41nC; No. of Pins:8; Power Dissipation:1.9W; Power, Pd:1.9W; Quantity, Reel:3000; Resistance, Rds on Max:0.0165ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25K; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:1.8°C/W; Voltage, Vds Max:80V; Voltage, Vgs Max:20V; Voltage, Vgs th Min:2V; Width, External:6.2mm; Width, Tape:12mm

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI7852DP-T1-E3 DISTI # SI7852DP-T1-E3-ND	Vishay Siliconix	MOSFET N-CH 80V 7.6A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	1000:$1.0616 500:$1.2813 100:$1.6474 10:$2.0500 1:$2.2700
SI7852DP-T1-E3 DISTI # SI7852DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 12000	3000:$1.1369 6000:$1.1029 12000:$1.0589 18000:$1.0289 30000:$1.0019
SI7852DP-T1-E3 DISTI # SI7852DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7852DP-T1-E3 DISTI # 06J8172	Vishay Intertechnologies	Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 06J8172) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$3.6700 25:$3.0500 50:$2.7100 100:$2.3600 250:$2.2200 500:$2.0800 1000:$1.7200
SI7852DP-T1-E3 DISTI # 29X0550	Vishay Intertechnologies	MOSFET, N CHANNEL, 80V, 7.6A, POWERPAK SO-8, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:8Pins , RoHS Compliant: Yes	0	1:$1.5700 3000:$1.5600 6000:$1.4900 12000:$1.3200
SI7852DP-T1-E3 DISTI # 06J8172	Vishay Intertechnologies	N CHANNEL MOSFET, 80V, 12.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$3.0600 25:$2.5400 50:$2.2600 100:$1.9700 250:$1.8500 500:$1.7300 1000:$1.4300
SI7852DP-T1-E3 DISTI # 70026416	Vishay Siliconix	TRANS MOSFET N-CH 80V 7.6A 8-PIN POWERPAK SO T/R RoHS: Compliant	0	3000:$1.4600
SI7852DP-T1-E3 DISTI # 781-SI7852DP-E3	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$3.0600 10:$2.5400 100:$1.9700 500:$1.7300 1000:$1.4300 3000:$1.3300 6000:$1.2800
SI7852DP-T1 DISTI # 781-SI7852DP	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8 RoHS: Not compliant	0
SI7852DP-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	8	2:$2.8500 1:$3.8000
SI7852DP-T1-E3	Vishay Intertechnologies	MOSFET Transistor, N-Channel, LLCC	4	3:$1.9600 1:$2.4500
SI7852DP-T1-E3	Vishay Intertechnologies	INSTOCK	400
SI7852DP-T1-E3 DISTI # 1470137	Vishay Intertechnologies	MOSFET,N CH,80V,7.6A,PPSO8 RoHS: Compliant	0	1:£2.0200 10:£1.6200 100:£1.2900 250:£1.1500 500:£1.0100
SI7852DP-T1-E3	Vishay Intertechnologies	MOSFET 80V Vds 20V Vgs PowerPAK SO-8	Americas -
SI7852DP-T1-E3 DISTI # 1470137	Vishay Intertechnologies	MOSFET,N CH,80V,7.6A,PPSO8 RoHS: Compliant	0	1:$3.7100 10:$3.3500 100:$2.6900 500:$2.0900 1000:$1.7400
SI7852DP-T1-E3 DISTI # 1470137RL	Vishay Intertechnologies	MOSFET,N CH,80V,7.6A,PPSO8 RoHS: Compliant	0	1:$3.7100 10:$3.3500 100:$2.6900 500:$2.0900 1000:$1.7400

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI7852DP-T1-E3 OMO.#: OMO-SI7852DP-T1-E3	MOSFET 80V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7852DP-T1-GE3 OMO.#: OMO-SI7852DP-T1-GE3	MOSFET 80V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7852DP-T1-GE3 OMO.#: OMO-SI7852DP-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
	Mfr.#: SI7852DP OMO.#: OMO-SI7852DP-1190	Nuevo y original
	Mfr.#: SI7852DP-T1 OMO.#: OMO-SI7852DP-T1-1190	MOSFET RECOMMENDED ALT 781-SI7852DP-E3
	Mfr.#: SI7852DP-T1-E3 OMO.#: OMO-SI7852DP-T1-E3-VISHAY	MOSFET N-CH 80V 7.6A PPAK SO-8
	Mfr.#: SI7852DP-T1-E3. OMO.#: OMO-SI7852DP-T1-E3--1190	Nuevo y original
	Mfr.#: SI7852DP-TI-E3 OMO.#: OMO-SI7852DP-TI-E3-1190	Nuevo y original
	Mfr.#: SI7852DPT1 OMO.#: OMO-SI7852DPT1-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 2000
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El precio actual de SI7852DP-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,55 US$~~; ~~1,55 US$~~

10: ~~1,47 US$~~; ~~14,72 US$~~

100: ~~1,40 US$~~; ~~139,50 US$~~

500: ~~1,32 US$~~; ~~658,75 US$~~

1000: ~~1,24 US$~~; ~~1 240,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

SI7852DP-T1 4
SI7852DP-T 5
SI7852D 7
SI7852 10
SI785 44
SI78 277
SI7 1547

SI7852DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes