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SI7852DP-T1-GE3

SI7852DP-T1-GE3
Mfr. #:
SI7852DP-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7852DP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
FET - Single
embalaje
Carrete
Alias ​​de parte
SI7852DP-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SO-8
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.9 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
31 ns
Hora de levantarse
11 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
7.6 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Resistencia a la fuente de desagüe de Rds
16.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
40 ns
Tiempo de retardo de encendido típico
17 ns
Modo de canal
Mejora
Tags
SI7852DP-T1, SI7852DP-T, SI7852D, SI7852, SI785, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R
***ark
N CHANNEL MOSFET, 80V, 7.6A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 80V, PPAK-SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0135ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.9W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
Parte # Mfg. Descripción Valores Precio
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$1.5508
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 80V 7.6A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.6814
  • 500:$1.9936
  • 100:$2.4620
  • 10:$3.0020
  • 1:$3.3600
SI7852DP-T1-GE3
DISTI # SI7852DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R (Alt: SI7852DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7852DP-T1-GE3
    DISTI # SI7852DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 80V 7.6A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7852DP-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$1.2189
    • 6000:$1.1829
    • 12000:$1.1349
    • 18000:$1.1029
    • 30000:$1.0739
    SI7852DP-T1-GE3
    DISTI # 84R8079    		Vishay IntertechnologiesN CHANNEL MOSFET, 80V, 7.6A, SOIC-8,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V RoHS Compliant: Yes0
    • 1:$3.0600
    • 25:$2.5400
    • 50:$2.2600
    • 100:$1.9700
    • 250:$1.8500
    • 500:$1.7300
    • 1000:$1.6500
    SI7852DP-T1-GE3
    DISTI # 15R5226    		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7.6A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0135ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.9W RoHS Compliant: Yes0
    • 1:$1.6700
    • 2000:$1.5900
    • 4000:$1.4900
    • 8000:$1.3800
    • 12000:$1.3300
    • 20000:$1.3100
    SI7852DP-T1-GE3
    DISTI # 781-SI7852DP-GE3    		Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		0
    • 1:$3.0600
    • 10:$2.5400
    • 100:$1.9700
    • 500:$1.7300
    • 1000:$1.6500
    • 3000:$1.6400
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:$4.8500
    • 10:$4.0300
    • 100:$3.1200
    • 500:$2.7500
    • 1000:$2.6200
    • 3000:$2.6000
    SI7852DP-T1-GE3
    DISTI # 2283668    		Vishay IntertechnologiesMOSFET, N-CH, 80V, PPAK-SO8
    RoHS: Compliant    		0
    • 1:£2.6600
    • 10:£1.9600
    • 100:£1.5100
    • 250:£1.4200
    • 500:£1.3300
    SI7852DP-T1-GE3Vishay IntertechnologiesMOSFET 80V Vds 20V Vgs PowerPAK SO-8Americas -
      Imagen Parte # Descripción
      SI7852DP-T1-E3

      Mfr.#: SI7852DP-T1-E3

      OMO.#: OMO-SI7852DP-T1-E3

      		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
      SI7852DP-T1-GE3

      Mfr.#: SI7852DP-T1-GE3

      OMO.#: OMO-SI7852DP-T1-GE3

      		 MOSFET 80V Vds 20V Vgs PowerPAK SO-8
      SI7852DP-T1-GE3

      Mfr.#: SI7852DP-T1-GE3

      OMO.#: OMO-SI7852DP-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 80V 12.5A 5.2W 16.5mohm @ 10V
      SI7852DP

      Mfr.#: SI7852DP

      OMO.#: OMO-SI7852DP-1190

      		 Nuevo y original
      SI7852DP-T1

      Mfr.#: SI7852DP-T1

      OMO.#: OMO-SI7852DP-T1-1190

      		 MOSFET RECOMMENDED ALT 781-SI7852DP-E3
      SI7852DP-T1-E3

      Mfr.#: SI7852DP-T1-E3

      OMO.#: OMO-SI7852DP-T1-E3-VISHAY

      		 MOSFET N-CH 80V 7.6A PPAK SO-8
      SI7852DP-T1-E3.

      Mfr.#: SI7852DP-T1-E3.

      OMO.#: OMO-SI7852DP-T1-E3--1190

      		 Nuevo y original
      SI7852DP-TI-E3

      Mfr.#: SI7852DP-TI-E3

      OMO.#: OMO-SI7852DP-TI-E3-1190

      		 Nuevo y original
      SI7852DPT1

      Mfr.#: SI7852DPT1

      OMO.#: OMO-SI7852DPT1-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de SI7852DP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,61 US$
      1,61 US$
      10
      1,53 US$
      15,30 US$
      100
      1,45 US$
      144,98 US$
      500
      1,37 US$
      684,60 US$
      1000
      1,29 US$
      1 288,70 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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