 | | | |
| PartNumber | SI7772DP-T1-GE3 | SI7758DP-T1-GE3 | SI7748DP-T1-GE3 |
| Description | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | MOSFET 30V 60A 104W 2.9mohm @ 10V | MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-SO-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 35.6 A | - | - |
| Rds On Drain Source Resistance | 13 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 28 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 29.8 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.04 mm | - | - |
| Length | 6.15 mm | - | - |
| Series | SI7 | SI7 | SI7 |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 37 S | - | - |
| Fall Time | 10 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | SI7772DP-GE3 | SI7758DP-GE3 | SI7748DP-GE3 |
| Unit Weight | 0.017870 oz | 0.017870 oz | 0.017870 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7788DP-T1-GE3 | MOSFET 30V 50A 69W 3.1mohm @ 10V | |
| SI7772DP-T1-GE3 | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 | ||
| SI7784DP-T1-GE3 | MOSFET RECOMMENDED ALT 781-SIR402DP-T1-GE3 | ||
| SI7758DP-T1-GE3 | MOSFET 30V 60A 104W 2.9mohm @ 10V | ||
| SI7792DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3 | ||
| SI7748DP-T1-GE3 | MOSFET RECOMMENDED ALT 78-SIRC10DP-T1-GE3 | ||
Vishay |
SI7788DP-T1-GE3 | RF Bipolar Transistors MOSFET 30V 50A 69W 3.1mohm @ 10V | |
| SI7792DP-T1-GE3 | RF Bipolar Transistors MOSFET 30 Volts 60 Amps 104 Watts | ||
| SI7758DP-T1-GE3 | RF Bipolar Transistors MOSFET 30V 60A 104W 2.9mohm @ 10V | ||
| SI7794DP-T1-GE3 | RF Bipolar Transistors MOSFET 30 Volts 60 Amps 48 Watts | ||
| SI7748DP-T1-GE3 | MOSFET N-CH 30V 50A PPAK SO-8 | ||
| SI7774DP-T1-GE3 | MOSFET N-CH 30V 60A PPAK SO-8 | ||
| SI7784DP-T1-GE3 | MOSFET N-CH 30V 35A PPAK SO-8 | ||
| SI7790DP-T1-GE3 | MOSFET N-CH 40V 50A PPAK SO-8 | ||
| SI7772DP-T1-GE3 | MOSFET N-CH 30V 35.6A PPAK SO-8 | ||
| SI7748 | Nuevo y original | ||
| SI7748DP-T1-E3 | Nuevo y original | ||
| SI7748DP-TI-GE3 | Nuevo y original | ||
| SI7784ADP | Nuevo y original | ||
| SI7784DP-T1-E3 | Nuevo y original | ||
| SI7784DP-TI-GE3 | Nuevo y original | ||
| SI7788DP | Nuevo y original | ||
| SI7788DP-T1-E3 | Nuevo y original | ||
| SI7790DP-T1-GE | Nuevo y original | ||
| SI7790DPT1GE3 | Power Field-Effect Transistor, 50A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI7792DP | Nuevo y original | ||
| SI7792DP-T1-E3 | Nuevo y original | ||
| SI7794DPT1GE3 | Nuevo y original | ||
| SI7748DP | Nuevo y original |