 | | | |
| PartNumber | SI7652DP-T1-E3 | SI7652 | SI7652CJ |
| Description | RF Bipolar Transistors MOSFET 30V 15A 3.9W | ||
| Manufacturer | Vishay / Siliconix | SI | - |
| Product Category | Transistors - FETs, MOSFETs - Single | IC Chips | - |
| Packaging | Reel | - | - |
| Part Aliases | SI7652DP-E3 | - | - |
| Unit Weight | 0.017870 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | SO-8 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 3.9 W | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 14 ns | - | - |
| Rise Time | 12 ns | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Rds On Drain Source Resistance | 18.5 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 32 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Channel Mode | Enhancement | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI7652DP-T1-GE3 | MOSFET 30V 15A 3.9W 15.8mohm @ 10V | |
| SI7652DP-T1-GE3 | RF Bipolar Transistors MOSFET 30V 15A 3.9W 15.8mohm @ 10V | ||
| SI7652DP-T1-E3 | RF Bipolar Transistors MOSFET 30V 15A 3.9W | ||
| SI7652 | Nuevo y original | ||
| SI7652CJ | Nuevo y original |