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| PartNumber | SI4943BDY-T1-E3 | SI4943CDY-T1-E3 | SI4943BDY-T1-GE3 |
| Description | MOSFET 20V 8.4A 2W | MOSFET -20V Vds 20V Vgs SO-8 | MOSFET 20V 8.4A 2.0W 19mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Series | SI4 | SI4 | SI4 |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | SI4943BDY-E3 | SI4943CDY-E3 | SI4943BDY-GE3 |
| Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
| Number of Channels | - | 2 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 8 A | - |
| Rds On Drain Source Resistance | - | 19.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 1 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 62 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 3.1 W | - |
| Configuration | - | Dual | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 2 P-Channel | - |
| Forward Transconductance Min | - | 19 S | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 71 ns | - |
| Typical Turn Off Delay Time | - | 29 ns | - |
| Typical Turn On Delay Time | - | 50 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4943BDY-T1-E3 | MOSFET 20V 8.4A 2W | |
| SI4943CDY-T1-E3 | MOSFET -20V Vds 20V Vgs SO-8 | ||
| SI4943CDY-T1-GE3 | MOSFET -20V Vds 20V Vgs SO-8 | ||
| SI4943BDY-T1-GE3 | MOSFET 20V 8.4A 2.0W 19mohm @ 10V | ||
Vishay |
SI4943BDY-T1-GE3 | RF Bipolar Transistors MOSFET 20V 8.4A 2.0W 19mohm @ 10V | |
| SI4943CDY-T1-E3 | RF Bipolar Transistors MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V | ||
| SI4943BDY-T1-E3 | MOSFET 2P-CH 20V 6.3A 8-SOIC | ||
| SI4943CDY-T1-GE3 | MOSFET 2P-CH 20V 8A 8-SOIC | ||
| SI4943BDY-T1-E3-CUT TAPE | Nuevo y original | ||
| SI4943BDY | Nuevo y original | ||
| SI4943BDY(R301) | Nuevo y original | ||
| SI4943CDY-T1-E3-S | Nuevo y original | ||
| SI4943DY | MOSFET 20V 8.4A 2W | ||
| SI4943DY-T1 | Nuevo y original | ||
| SI4943DY-T1-E3 | MOSFET RECOMMENDED ALT 781-SI4943BDY-E3 | ||
| SI4943DY-T1-E3(PB) | Nuevo y original | ||
| SI4943DY-T1-GE3 | Nuevo y original | ||
| SI4943CDY-T1-GE3-S | Nuevo y original |