SI4943CDY-T1-E3

SI4943CDY-T1-E3
Mfr. #:
SI4943CDY-T1-E3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4943CDY-T1-E3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI4943CDY-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Tape & Reel (TR)
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Temperatura de funcionamiento
-50°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
8-SO
Tipo FET
2 P-Channel (Dual)
Potencia máxima
3.1W
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
1945pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
8A
Rds-On-Max-Id-Vgs
19.2 mOhm @ 8.3A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
62nC @ 10V
Tags
SI4943C, SI4943, SI494, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Parte # Mfg. Descripción Valores Precio
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3CT-ND
Vishay SiliconixMOSFET 2P-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1917In Stock
  • 1000:$0.9036
  • 500:$1.0905
  • 100:$1.4021
  • 10:$1.7450
  • 1:$1.9300
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3DKR-ND
Vishay SiliconixMOSFET 2P-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1917In Stock
  • 1000:$0.9036
  • 500:$1.0905
  • 100:$1.4021
  • 10:$1.7450
  • 1:$1.9300
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3TR-ND
Vishay SiliconixMOSFET 2P-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$0.8167
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4943CDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.7999
  • 5000:$0.7759
  • 10000:$0.7449
  • 15000:$0.7239
  • 25000:$0.7049
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R (Alt: SI4943CDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel
Asia - 0
    SI4943CDY-T1-E3
    DISTI # 781-SI4943CDY-E3
    Vishay IntertechnologiesMOSFET -20V Vds 20V Vgs SO-8
    RoHS: Compliant
    486
    • 1:$1.7100
    • 10:$1.4200
    • 100:$1.1000
    • 500:$0.9630
    • 1000:$0.7980
    • 2500:$0.7430
    • 5000:$0.7160
    • 10000:$0.7150
    Imagen Parte # Descripción
    SI4943CDY-T1-E3

    Mfr.#: SI4943CDY-T1-E3

    OMO.#: OMO-SI4943CDY-T1-E3

    MOSFET -20V Vds 20V Vgs SO-8
    SI4943CDY-T1-GE3

    Mfr.#: SI4943CDY-T1-GE3

    OMO.#: OMO-SI4943CDY-T1-GE3

    MOSFET -20V Vds 20V Vgs SO-8
    SI4943CDY-T1-E3

    Mfr.#: SI4943CDY-T1-E3

    OMO.#: OMO-SI4943CDY-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V
    SI4943CDY-T1-E3-S

    Mfr.#: SI4943CDY-T1-E3-S

    OMO.#: OMO-SI4943CDY-T1-E3-S-1190

    Nuevo y original
    SI4943CDY-T1-GE3

    Mfr.#: SI4943CDY-T1-GE3

    OMO.#: OMO-SI4943CDY-T1-GE3-VISHAY

    MOSFET 2P-CH 20V 8A 8-SOIC
    SI4943CDY-T1-GE3-S

    Mfr.#: SI4943CDY-T1-GE3-S

    OMO.#: OMO-SI4943CDY-T1-GE3-S-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5500
    Ingrese la cantidad:
    El precio actual de SI4943CDY-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,06 US$
    1,06 US$
    10
    1,00 US$
    10,04 US$
    100
    0,95 US$
    95,16 US$
    500
    0,90 US$
    449,35 US$
    1000
    0,85 US$
    845,90 US$
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