SI4425B

SI4425BDY-T1-E3 vs SI4425BDY-T1-GE3

 
PartNumberSI4425BDY-T1-E3SI4425BDY-T1-GE3
DescriptionMOSFET 30V 11A 2.5WMOSFET 30V 11.4A 2.5W 12mohm @ 10V
ManufacturerVishayVishay
Product CategoryMOSFETMOSFET
RoHSEE
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSO-8SO-8
Number of Channels1 Channel-
Transistor PolarityP-Channel-
Id Continuous Drain Current11.4 A-
Rds On Drain Source Resistance12 mOhms-
Vgs th Gate Source Threshold Voltage1 V-
Vgs Gate Source Voltage10 V-
Qg Gate Charge64 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation2.5 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameTrenchFETTrenchFET
PackagingReelReel
Height1.75 mm1.75 mm
Length4.9 mm4.9 mm
SeriesSI4SI4
Transistor Type1 P-Channel-
Width3.9 mm3.9 mm
BrandVishay / SiliconixVishay / Siliconix
Forward Transconductance Min29 S-
Fall Time53 ns-
Product TypeMOSFETMOSFET
Rise Time13 ns-
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns-
Typical Turn On Delay Time15 ns-
Part # AliasesSI4425BDY-T1SI4425BDY-GE3
Unit Weight0.006596 oz0.006596 oz
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI4425BDY-T1-E3 MOSFET 30V 11A 2.5W
SI4425BDY-T1-GE3 MOSFET 30V 11.4A 2.5W 12mohm @ 10V
Vishay
Vishay
SI4425BDY-T1-GE3 RF Bipolar Transistors MOSFET 30V 11.4A 2.5W 12mohm @ 10V
SI4425BDY-T1-E3 MOSFET P-CH 30V 8.8A 8-SOIC
SI4425BDY-T1-E3-CUT TAPE Nuevo y original
SI4425B Nuevo y original
SI4425BD , HZU18BTR Nuevo y original
SI4425BDY Nuevo y original
SI4425BDY-1 Nuevo y original
SI4425BDY-T1 Nuevo y original
SI4425BDY-T1 E3 Nuevo y original
SI4425BDY-T1-E3. FOR NEW DESIGNS USE SI4425DDY-T1-GE3 ROHS COMPLIANT: NO
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