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| PartNumber | SI4425BDY-T1-E3 | SI4425DDY-T1-GE3 | SI4425BDY-T1-GE3 |
| Description | MOSFET 30V 11A 2.5W | MOSFET -30V Vds 20V Vgs SO-8 | MOSFET 30V 11.4A 2.5W 12mohm @ 10V |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | E | E |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 | SO-8 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Id Continuous Drain Current | 11.4 A | 19.7 A | - |
| Rds On Drain Source Resistance | 12 mOhms | 9.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 64 nC | 53 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | 5.7 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.75 mm | - | 1.75 mm |
| Length | 4.9 mm | - | 4.9 mm |
| Series | SI4 | SI4 | SI4 |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 3.9 mm | - | 3.9 mm |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 29 S | 40 S | - |
| Fall Time | 53 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 13 ns | 9 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 100 ns | 42 ns | - |
| Typical Turn On Delay Time | 15 ns | 12 ns | - |
| Part # Aliases | SI4425BDY-T1 | SI4425DDY-GE3 | SI4425BDY-GE3 |
| Unit Weight | 0.006596 oz | 0.006596 oz | 0.006596 oz |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI4425BDY-T1-E3 | MOSFET 30V 11A 2.5W | |
| SI4425DDY-T1-GE3 | MOSFET -30V Vds 20V Vgs SO-8 | ||
| SI4425BDY-T1-GE3 | MOSFET 30V 11.4A 2.5W 12mohm @ 10V | ||
| SI4425FDY-T1-GE3 | MOSFET P-Channel 30 V (D-S) MOSFET | ||
Vishay |
SI4425BDY-T1-GE3 | RF Bipolar Transistors MOSFET 30V 11.4A 2.5W 12mohm @ 10V | |
| SI4425BDY-T1-E3 | MOSFET P-CH 30V 8.8A 8-SOIC | ||
| SI4425DDY-T1-GE3 | MOSFET P-CH 30V 19.7A 8-SOIC | ||
| SI4425BDY-T1-E3-CUT TAPE | Nuevo y original | ||
| SI4425DDY-T1-GE3-CUT TAPE | Nuevo y original | ||
| SI4425 | Nuevo y original | ||
| SI4425B | Nuevo y original | ||
| SI4425BD , HZU18BTR | Nuevo y original | ||
| SI4425BDY | Nuevo y original | ||
| SI4425BDY-1 | Nuevo y original | ||
| SI4425BDY-T1 | Nuevo y original | ||
| SI4425BDY-T1 E3 | Nuevo y original | ||
| SI4425BDY-T1-E3. | FOR NEW DESIGNS USE SI4425DDY-T1-GE3 ROHS COMPLIANT: NO | ||
| SI4425DDY | Nuevo y original | ||
| SI4425DY | Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI4425DY(4425) | Nuevo y original | ||
| SI4425DY- T1-E3 | Nuevo y original | ||
| SI4425DY-1 | Nuevo y original | ||
| SI4425DY-NL | Nuevo y original | ||
| SI4425DY-T1 | MOSFET 30V 11A 2.5W | ||
| SI4425DY-T1-E3 | Nuevo y original | ||
| SI4425DY-T1-E3. | Nuevo y original | ||
| SI4425DY-T1-GE3 | Nuevo y original | ||
| SI4425DYT1 | Nuevo y original | ||
| SI4425DYT1E3 | Nuevo y original |