SI4425BDY-T1-GE3

SI4425BDY-T1-GE3
Mfr. #:
SI4425BDY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 30V 11.4A 2.5W 12mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4425BDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4425BDY-T1-GE3 DatasheetSI4425BDY-T1-GE3 Datasheet (P4-P6)SI4425BDY-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SI4425BDY-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4425BDY-GE3
Unidad de peso:
0.006596 oz
Tags
SI4425BDY-T, SI4425BDY, SI4425BD, SI4425B, SI4425, SI442, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-11.4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):19mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-400mV; Power Dissipation Pd:2.5W
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.8A; On Resistance Rds(On):0.01Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3Mv; Product Range:-Rohs Compliant: No
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descripción Valores Precio
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 8.8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.9355
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 8.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2500In Stock
  • 1000:$1.0350
  • 500:$1.2491
  • 100:$1.6060
  • 10:$1.9990
  • 1:$2.2100
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 8.8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2500In Stock
  • 1000:$1.0350
  • 500:$1.2491
  • 100:$1.6060
  • 10:$1.9990
  • 1:$2.2100
SI4425BDY-T1-GE3
DISTI # SI4425BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.5619
  • 5000:$0.5459
  • 10000:$0.5229
  • 15000:$0.5089
  • 25000:$0.4949
SI4425BDY-T1-GE3
DISTI # 26R1875
Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-400mV,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$1.3100
  • 10:$1.0800
  • 25:$0.9940
  • 50:$0.9170
  • 100:$0.8540
  • 250:$0.7920
  • 500:$0.7410
SI4425BDY-T1-GE3
DISTI # 15R5010
Vishay IntertechnologiesP CH MOSFET,Continuous Drain Current Id:-11.4A,Drain Source Voltage Vds:-30V,Filter Terminals:Surface Mount,No. of Pins:8,On Resistance Rds(on):19mohm,Operating Temperature Range:-55°C to +150°C,Package / Case:8-SOIC RoHS Compliant: Yes0
  • 1:$0.8640
  • 2500:$0.8570
  • 5000:$0.8320
  • 10000:$0.8010
SI4425BDY-T1-GE3.
DISTI # 28AC2137
Vishay IntertechnologiesTransistor Polarity:P Channel,Continuous Drain Current Id:8.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.01ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3mV,Power Dissipation Pd:1.5W,No. of Pins:8Pins RoHS Compliant: No0
  • 1:$0.8640
  • 2500:$0.8570
  • 5000:$0.8320
  • 10000:$0.8010
SI4425BDY-T1-GE3
DISTI # 781-SI4425BDY-GE3
Vishay IntertechnologiesMOSFET 30V 11.4A 2.5W 12mohm @ 10V
RoHS: Compliant
3960
  • 1:$1.3100
  • 10:$1.0800
  • 100:$0.8230
  • 500:$0.7080
  • 1000:$0.5590
  • 2500:$0.5220
Imagen Parte # Descripción
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Mfr.#: TL331QDBVRQ1

OMO.#: OMO-TL331QDBVRQ1

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FT232RQ-REEL

Mfr.#: FT232RQ-REEL

OMO.#: OMO-FT232RQ-REEL

USB Interface IC USB to Serial UART Enhanced IC QFN-32
US1NWF-7

Mfr.#: US1NWF-7

OMO.#: OMO-US1NWF-7

Rectifiers Ultra-Fast Recovery Rectifier
2N7002E-T1-E3

Mfr.#: 2N7002E-T1-E3

OMO.#: OMO-2N7002E-T1-E3

MOSFET 60V 0.24A
SQ2337ES-T1_GE3

Mfr.#: SQ2337ES-T1_GE3

OMO.#: OMO-SQ2337ES-T1-GE3-3D7

MOSFET P-Channel 80V AEC-Q101 Qualified
BSZ15DC02KD H

Mfr.#: BSZ15DC02KD H

OMO.#: OMO-BSZ15DC02KD-H

MOSFET SMALL SIGNAL+P-CH
M55-7026842R

Mfr.#: M55-7026842R

OMO.#: OMO-M55-7026842R

Board to Board & Mezzanine Connectors 68P 1.27 SMC Male
TL331QDBVRQ1

Mfr.#: TL331QDBVRQ1

OMO.#: OMO-TL331QDBVRQ1-TEXAS-INSTRUMENTS

Analog Comparators AC Sgl Diff Comp- arato
IHLP2020CZER2R2M5A

Mfr.#: IHLP2020CZER2R2M5A

OMO.#: OMO-IHLP2020CZER2R2M5A-819

Fixed Inductors 2.2uH 20% Automotive
2N7002E-T1-E3

Mfr.#: 2N7002E-T1-E3

OMO.#: OMO-2N7002E-T1-E3-VISHAY

MOSFET N-CH 60V 240MA SOT-23
Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de SI4425BDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,30 US$
1,30 US$
10
1,07 US$
10,70 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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