 | |  | |
| PartNumber | SI2337DS-T1-E3 | SI2337DS-T1-GE3 | SI2337DS |
| Description | MOSFET -80V Vds 20V Vgs SOT-23 | MOSFET -80V Vds 20V Vgs SOT-23 | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 2.2 A | - | - |
| Rds On Drain Source Resistance | 270 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 17 nC | - | - |
| Minimum Operating Temperature | - 50 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | - |
| Height | 1.45 mm | 1.45 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | SI2 | SI2 | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.6 mm | 1.6 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 4.3 S | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 10 ns | - | - |
| Part # Aliases | SI2337DS-E3 | SI2337DS-GE3 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2337DS-T1-E3 | MOSFET -80V Vds 20V Vgs SOT-23 | |
| SI2337DS-T1-GE3 | MOSFET -80V Vds 20V Vgs SOT-23 | ||
| SI2337DS | Nuevo y original | ||
Vishay |
SI2337DS-T1-E3 | MOSFET P-CH 80V 2.2A SOT23-3 | |
| SI2337DS-T1-GE3 | MOSFET P-CH 80V 2.2A SOT23-3 |