SI2323DS-T

SI2323DS-T1-E3 vs SI2323DS-T1-GE3 vs SI2323DS-T1

 
PartNumberSI2323DS-T1-E3SI2323DS-T1-GE3SI2323DS-T1
DescriptionMOSFET 20V 3.7A 0.039OhmMOSFET 20V 4.7A 1.25W 39 mohms @ 4.5VMOSFET P-CH 20V 3.7A SOT23
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current4.7 A4.7 A-
Rds On Drain Source Resistance39 mOhms39 mOhms-
Vgs th Gate Source Threshold Voltage400 mV400 mV-
Vgs Gate Source Voltage4.5 V4.5 V-
Qg Gate Charge19 nC19 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.25 W1.25 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.45 mm1.45 mm-
Length2.9 mm2.9 mm-
SeriesSI2SI2-
Transistor Type1 P-Channel1 P-Channel-
Width1.6 mm1.6 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min16 S16 S-
Fall Time48 ns48 ns-
Product TypeMOSFETMOSFET-
Rise Time43 ns43 ns-
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time71 ns71 ns-
Typical Turn On Delay Time25 ns25 ns-
Part # AliasesSI2323DS-E3SI2323DS-GE3-
Unit Weight0.001411 oz0.000282 oz-
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2323DS-T1-E3 MOSFET 20V 3.7A 0.039Ohm
SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
Vishay
Vishay
SI2323DS-T1 MOSFET P-CH 20V 3.7A SOT23
SI2323DS-T1-E3 MOSFET P-CH 20V 3.7A SOT23-3
SI2323DS-T1-GE3 MOSFET P-CH 20V 3.7A SOT23-3
SI2323DS-TI-E3 Nuevo y original
SI2323DS-T1-E3-CUT TAPE Nuevo y original
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