SI2323DS

SI2323DS-T1-E3 vs SI2323DS vs SI2323DS-T1-E3-CUT TAPE

 
PartNumberSI2323DS-T1-E3SI2323DSSI2323DS-T1-E3-CUT TAPE
DescriptionMOSFET 20V 3.7A 0.039Ohm
ManufacturerVishayVISHAY-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current4.7 A--
Rds On Drain Source Resistance39 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge19 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
Height1.45 mm--
Length2.9 mm--
SeriesSI2--
Transistor Type1 P-Channel--
Width1.6 mm--
BrandVishay / Siliconix--
Forward Transconductance Min16 S--
Fall Time48 ns--
Product TypeMOSFET--
Rise Time43 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time71 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesSI2323DS-E3--
Unit Weight0.001411 oz--
Fabricante Parte # Descripción RFQ
Vishay / Siliconix
Vishay / Siliconix
SI2323DS-T1-E3 MOSFET 20V 3.7A 0.039Ohm
SI2323DS-T1-GE3 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
SI2323DS Nuevo y original
SI2323DS-TI-E3 Nuevo y original
SI2323DS-T1-E3-CUT TAPE Nuevo y original
Vishay
Vishay
SI2323DS-T1 MOSFET P-CH 20V 3.7A SOT23
SI2323DS-T1-E3 MOSFET P-CH 20V 3.7A SOT23-3
SI2323DS-T1-GE3 MOSFET P-CH 20V 3.7A SOT23-3
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