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SI2323DS-T1-GE3

SI2323DS-T1-GE3
Mfr. #:
SI2323DS-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET P-CH 20V 3.7A SOT23-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2323DS-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SI2323DS-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY
categoria de producto
Chips de IC
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI2323DS-GE3
Unidad de peso
0.050717 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
TO-236-3, SC-59, SOT-23-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
SOT-23-3 (TO-236)
Configuración
Único
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
750mW
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
1020pF @ 10V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
3.7A (Ta)
Rds-On-Max-Id-Vgs
39 mOhm @ 4.7A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
19nC @ 4.5V
Disipación de potencia Pd
750 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
43 ns
Hora de levantarse
43 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
3.7 A
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Resistencia a la fuente de desagüe de Rds
39 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
71 ns
Tiempo de retardo de encendido típico
25 ns
Modo de canal
Mejora
Tags
SI2323DS-T1, SI2323DS-T, SI2323DS, SI2323D, SI2323, SI232, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2323DS-T1-GE3
DISTI # V72:2272_07434936		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
RoHS: Compliant		54
  • 25:$0.4688
  • 10:$0.5729
  • 1:$0.6442
SI2323DS-T1-GE3
DISTI # V36:1790_07434936		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.4227
SI2323DS-T1-GE3
DISTI # SI2323DS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 20V 3.7A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		18754In Stock
  • 1000:$0.2539
  • 500:$0.3173
  • 100:$0.4014
  • 10:$0.5240
  • 1:$0.5900
SI2323DS-T1-GE3
DISTI # SI2323DS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 20V 3.7A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		18754In Stock
  • 1000:$0.2539
  • 500:$0.3173
  • 100:$0.4014
  • 10:$0.5240
  • 1:$0.5900
SI2323DS-T1-GE3
DISTI # SI2323DS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 20V 3.7A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		18000In Stock
  • 30000:$0.1972
  • 15000:$0.2079
  • 6000:$0.2233
  • 3000:$0.2387
SI2323DS-T1-GE3
DISTI # 32371349		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.3156
SI2323DS-T1-GE3
DISTI # 32878336		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
RoHS: Compliant		2850
  • 137:$0.5615
SI2323DS-T1-GE3
DISTI # 30331539		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
RoHS: Compliant		54
  • 21:$0.6442
SI2323DS-T1-GE3
DISTI # SI2323DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2323DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.2719
  • 18000:$0.2789
  • 12000:$0.2869
  • 6000:$0.2989
  • 3000:$0.3079
SI2323DS-T1-GE3
DISTI # SI2323DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: SI2323DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.2419
  • 18000:€0.2599
  • 12000:€0.2819
  • 6000:€0.3279
  • 3000:€0.4799
SI2323DS-T1-GE3
DISTI # SI2323DS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R (Alt: SI2323DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2323DS-T1-GE3
    DISTI # 16P3711    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 16P3711)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1000:$0.4560
    • 500:$0.5310
    • 250:$0.5880
    • 100:$0.6430
    • 50:$0.7450
    • 25:$0.8460
    • 1:$1.0600
    SI2323DS-T1-GE3
    DISTI # 71T8046    		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.7A 3-Pin TO-236 T/R - Tape and Reel (Alt: 71T8046)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 12000:$0.4450
    • 6000:$0.4640
    • 1:$0.4880
    SI2323DS-T1-GE3
    DISTI # 16P3711    		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 4.7A TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes0
    • 1:$0.3650
    • 25:$0.3650
    • 50:$0.3650
    • 100:$0.3650
    SI2323DS-T1-GE3
    DISTI # 71T8046    		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 4.7A TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-3.7A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.031ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:-1V RoHS Compliant: Yes3000
    • 1:$0.6490
    • 3000:$0.6490
    SI2323DS-T1-GE3
    DISTI # 70459506    		Vishay Siliconix20V 4.7A 1.25W 39 mohms @ 4.5V
    RoHS: Compliant    		0
    • 3000:$0.6620
    • 6000:$0.6260
    SI2323DS-T1-GE3Vishay IntertechnologiesSingle P-Channel 20 V 0.039 O 19 nC Surface Mount Power Mosfet - SOT-23
    RoHS: Compliant    		6000Reel
    • 3000:$0.2250
    SI2323DS-T1-GE3
    DISTI # 781-SI2323DS-T1-GE3    		Vishay IntertechnologiesMOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
    RoHS: Compliant    		19116
    • 1:$0.8400
    • 10:$0.6760
    • 100:$0.5130
    • 500:$0.4240
    • 1000:$0.3390
    • 3000:$0.3070
    • 6000:$0.2860
    • 9000:$0.2750
    • 24000:$0.2660
    SI2323DS-T1-GE3Vishay Siliconix3700MA, 20V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET, TO-236AB5
    • 1:$0.4800
    SI2323DST1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
    RoHS: Compliant    		855
      SI2323DS-T1-GE3
      DISTI # 2371204      		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 4.7A TO-236, FULL REEL
      RoHS: Compliant      		3000
      • 3000:$0.5700
      SI2323DS-T1-GE3
      DISTI # XSFP00000063440      		Vishay Siliconix 
      RoHS: Compliant      		6000 in Stock0 on Order
      • 6000:$0.3000
      • 3000:$0.3214
      SI2323DS-T1-GE3Vishay IntertechnologiesMOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
      RoHS: Compliant      		Americas - 6000
        SI2323DS-T1-GE3
        DISTI # 2371204        		Vishay IntertechnologiesP CHANNEL MOSFET, -20V, 4.7A TO-236, FUL3000
        • 3000:£0.5880
        Imagen Parte # Descripción
        SI2323DS-T1-E3

        Mfr.#: SI2323DS-T1-E3

        OMO.#: OMO-SI2323DS-T1-E3

        		 MOSFET 20V 3.7A 0.039Ohm
        SI2323DS-T1-GE3

        Mfr.#: SI2323DS-T1-GE3

        OMO.#: OMO-SI2323DS-T1-GE3

        		 MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
        SI2323DDS-T1-E3

        Mfr.#: SI2323DDS-T1-E3

        OMO.#: OMO-SI2323DDS-T1-E3-1190

        		 Nuevo y original
        SI2323DDS-T1-GE3

        Mfr.#: SI2323DDS-T1-GE3

        OMO.#: OMO-SI2323DDS-T1-GE3-VISHAY

        		 MOSFET P-CH 20V 5.3A SOT-23
        SI2323DS-T1

        Mfr.#: SI2323DS-T1

        OMO.#: OMO-SI2323DS-T1-VISHAY

        		 MOSFET P-CH 20V 3.7A SOT23
        SI2323DS-T1-E3

        Mfr.#: SI2323DS-T1-E3

        OMO.#: OMO-SI2323DS-T1-E3-VISHAY

        		 MOSFET P-CH 20V 3.7A SOT23-3
        SI2323DS-T1-GE3

        Mfr.#: SI2323DS-T1-GE3

        OMO.#: OMO-SI2323DS-T1-GE3-VISHAY

        		 MOSFET P-CH 20V 3.7A SOT23-3
        SI2323DS-TI-E3

        Mfr.#: SI2323DS-TI-E3

        OMO.#: OMO-SI2323DS-TI-E3-1190

        		 Nuevo y original
        SI2323DDS-T1-GE3-CUT TAPE

        Mfr.#: SI2323DDS-T1-GE3-CUT TAPE

        OMO.#: OMO-SI2323DDS-T1-GE3-CUT-TAPE-1190

        		 Nuevo y original
        SI2323DS-T1-E3-CUT TAPE

        Mfr.#: SI2323DS-T1-E3-CUT TAPE

        OMO.#: OMO-SI2323DS-T1-E3-CUT-TAPE-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        2000
        Ingrese la cantidad:
        El precio actual de SI2323DS-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,30 US$
        0,30 US$
        10
        0,28 US$
        2,81 US$
        100
        0,27 US$
        26,62 US$
        500
        0,25 US$
        125,70 US$
        1000
        0,24 US$
        236,60 US$
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