 |  | | |
| PartNumber | SI2307BDS-T1-E3 | SI2307BDS | SI2307BDS-T1-E3-CUT TAPE |
| Description | MOSFET 30V 3.2A 1.25W | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | |
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 2.5 A | - | - |
| Rds On Drain Source Resistance | 78 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 0.75 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SI2 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 5 S | - | - |
| Fall Time | 14 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | SI2307BDS-E3 | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2307BDS-T1-E3 | MOSFET 30V 3.2A 1.25W | |
| SI2307BDS | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | ||
| SI2307BDS-T1-E3-CUT TAPE | Nuevo y original | ||
Vishay |
SI2307BDS-T1-GE3 | MOSFET P-CH 30V 2.5A SOT23-3 | |
| SI2307BDS-T1-E3 | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |