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SI2307BDS-T1-E3

SI2307BDS-T1-E3
Mfr. #:
SI2307BDS-T1-E3
Fabricante:
Vishay
Descripción:
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI2307BDS-T1-E3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SI2307BDS-T1-E3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
Chips de IC
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI2307BDS-E3
Unidad de peso
0.050717 oz
Estilo de montaje
SMD / SMT
Nombre comercial
TrenchFET
Paquete-Estuche
TO-236-3, SC-59, SOT-23-3
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
SOT-23-3 (TO-236)
Configuración
Único
Tipo FET
Canal P MOSFET, óxido metálico
Potencia máxima
750mW
Tipo transistor
1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
380pF @ 15V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
2.5A (Ta)
Rds-On-Max-Id-Vgs
78 mOhm @ 3.2A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
15nC @ 10V
Disipación de potencia Pd
750 mW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
12 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
2.5 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Resistencia a la fuente de desagüe de Rds
78 mOhms
Polaridad del transistor
P-Channel
Tiempo de retardo de apagado típico
25 ns
Tiempo de retardo de encendido típico
9 ns
Transconductancia directa-Mín.
5 S
Modo de canal
Mejora
Tags
SI2307BDS-T, SI2307B, SI2307, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W
***ure Electronics
Single P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
***ical
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
***C
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23
***eco
P-CH MOSFET SOT-23 30V 78MOHM @ 10V<AZ
***et Europe
Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 30V 2.5A SOT23-3
***Components
MOSFET P-Channel 30V 2.5A TO236
***
30V, 78MOHM @ 10V, SOT-23
***ser
P-Channel MOSFETs 30V 3.2A 1.25W
***ark
P Channel Mosfet, -30V, 2.5A To-236, Full Reel; Transistor Polarity:p Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.063Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3Vrohs Compliant: No
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.25W
***nell
MOSFET, CANALE P, -30V, -2.5A, SOT-23-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.5A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.063ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:750mW; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jun-2015); Temperatura di Esercizio Min:-55°C
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descripción Valores Precio
SI2307BDS-T1-E3
DISTI # V72:2272_07432050		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant		2185
  • 1000:$0.2152
  • 500:$0.2668
  • 250:$0.3416
  • 100:$0.3425
  • 25:$0.4258
  • 10:$0.4276
  • 1:$0.4860
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3CT-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24407In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3DKR-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24407In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3TR-ND		Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 3000:$0.1875
SI2307BDS-T1-E3
DISTI # 29567482		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant		2185
  • 1000:$0.2152
  • 500:$0.2668
  • 250:$0.3416
  • 100:$0.3425
  • 28:$0.4258
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2307BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1949
  • 6000:$0.1889
  • 12000:$0.1809
  • 18000:$0.1759
  • 30000:$0.1719
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.3179
  • 6000:€0.2169
  • 12000:€0.1869
  • 18000:€0.1719
  • 30000:€0.1599
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2307BDS-T1-E3
    DISTI # 02J5180    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: 02J5180)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 1:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3
    DISTI # 64R4907    		Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 64R4907)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1:$0.9120
    • 25:$0.7280
    • 50:$0.6410
    • 100:$0.5520
    • 250:$0.5040
    • 500:$0.4560
    • 1000:$0.3650
    SI2307BDS-T1-E3
    DISTI # 64R4907    		Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:750mW , RoHS Compliant: Yes3436
    • 1:$0.9120
    • 25:$0.7280
    • 50:$0.6410
    • 100:$0.5520
    • 250:$0.5040
    • 500:$0.4560
    • 1000:$0.3650
    SI2307BDS-T1-E3
    DISTI # 02J5180    		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 2.5A TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V, RoHS Compliant: Yes6000
    • 1:$0.3310
    • 3000:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3.
    DISTI # 30AC0138    		Vishay IntertechnologiesFOR NEW DESIGNS USE SI2307CDS-T1-GE3 , ROHS COMPLIANT: NO0
    • 1:$0.3380
    • 3000:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3
    DISTI # 70026066    		Vishay SiliconixMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.063Ohm,ID -2.5A,TO-236 (SOT-23),PD 0.75W
    RoHS: Compliant    		0
    • 3000:$0.3400
    • 6000:$0.3000
    • 9000:$0.2700
    SI2307BDS-T1-E3
    DISTI # 781-SI2307BDS-E3    		Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W
    RoHS: Compliant    		16579
    • 1:$0.7600
    • 10:$0.6070
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    • 3000:$0.2760
    • 6000:$0.2570
    • 9000:$0.2480
    SI2307BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
    RoHS: Compliant    		21000Reel
    • 3000:$0.2700
    SI2307BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
    RoHS: Compliant    		2945Cut Tape/Mini-Reel
    • 1:$0.3750
    • 250:$0.3200
    • 500:$0.3150
    • 750:$0.3100
    • 1500:$0.3000
    SI2307BDS-T1-E3Vishay BLH 2730
    • 12:$0.4500
    • 46:$0.2925
    • 172:$0.1688
    • 594:$0.1440
    • 1286:$0.1260
    SI2307BDS-T1-E3Vishay Intertechnologies 1625
      SI2307BDS-T1-E3Vishay Siliconix 165
      • 12:$0.4500
      • 46:$0.2925
      SI2307BDS-T1-E3Vishay Intertechnologies2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB2184
      • 1112:$0.1560
      • 201:$0.1800
      • 1:$0.6000
      SI2307BDS-T1-E3Vishay Semiconductors2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB132
      • 43:$0.3000
      • 9:$0.4800
      • 1:$0.6000
      SI2307BDS-T1-E3
      DISTI # XSFP00000063433      		Vishay Siliconix 
      RoHS: Compliant      		40343
      • 3000:$0.7500
      • 40343:$0.6818
      SI2307BDS-T1-E3
      DISTI # 1571143      		Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 2.5A TO-236, FUL
      RoHS: Compliant      		6000
      • 3000:$1.0500
      SI2307BDS-T1-E3
      DISTI # 2396090      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -2.5A, SOT-23-3
      RoHS: Compliant      		3781
      • 1:$0.9350
      • 10:$0.7900
      • 100:$0.5920
      • 500:$0.4340
      • 1000:$0.4030
      SI2307BDS-T1-E3
      DISTI # C1S803600844070      		Vishay IntertechnologiesMOSFETs
      RoHS: Compliant      		2185
      • 250:$0.3407
      • 100:$0.3416
      • 25:$0.4240
      • 10:$0.4258
      SI2307BDS-T1-E3
      DISTI # 2396090      		Vishay IntertechnologiesMOSFET, P-CH, -30V, -2.5A, SOT-23-3
      RoHS: Compliant      		3714
      • 5:£0.4560
      • 25:£0.4240
      • 100:£0.3030
      • 250:£0.2630
      • 500:£0.2220
      SI2307BDS-T1-E3Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W
      RoHS: Compliant      		Americas -
        Imagen Parte # Descripción
        SI2307BDS-T1-E3

        Mfr.#: SI2307BDS-T1-E3

        OMO.#: OMO-SI2307BDS-T1-E3

        		 MOSFET 30V 3.2A 1.25W
        SI2307BDS

        Mfr.#: SI2307BDS

        OMO.#: OMO-SI2307BDS-1190

        		 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
        SI2307BDS-T1-GE3

        Mfr.#: SI2307BDS-T1-GE3

        OMO.#: OMO-SI2307BDS-T1-GE3-VISHAY

        		 MOSFET P-CH 30V 2.5A SOT23-3
        SI2307BDS-T1-E3-CUT TAPE

        Mfr.#: SI2307BDS-T1-E3-CUT TAPE

        OMO.#: OMO-SI2307BDS-T1-E3-CUT-TAPE-1190

        		 Nuevo y original
        SI2307BDS-T1-E3

        Mfr.#: SI2307BDS-T1-E3

        OMO.#: OMO-SI2307BDS-T1-E3-VISHAY

        		 Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de SI2307BDS-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,11 US$
        0,11 US$
        10
        0,11 US$
        1,05 US$
        100
        0,10 US$
        9,96 US$
        500
        0,09 US$
        47,05 US$
        1000
        0,09 US$
        88,60 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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