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| PartNumber | SI2307BDS-T1-E3 | SI2307CDS-T1-E3 | SI2307-TP |
| Description | MOSFET 30V 3.2A 1.25W | MOSFET -30V Vds 20V Vgs SOT-23 | MOSFET P-Channel MOSFET, SOT-23 package |
| Manufacturer | Vishay | Vishay | Micro Commercial Components (MCC) |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 2.5 A | 3.5 A | 2.7 A |
| Rds On Drain Source Resistance | 78 mOhms | 88 mOhms | 73 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 3 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 9 nC | 4.1 nC | 6.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 0.75 W | 1.8 W | 1.1 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | TrenchFET | TrenchFET | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.45 mm | - | - |
| Length | 2.9 mm | - | - |
| Series | SI2 | SI2 | TrenchFET |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 1.6 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Micro Commercial Components (MCC) |
| Forward Transconductance Min | 5 S | 7 S | 7 S |
| Fall Time | 14 ns | 7.7 ns | 17 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 13 ns | 40 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 17 ns | 20 ns |
| Typical Turn On Delay Time | 9 ns | 5.5 ns | 40 ns |
| Part # Aliases | SI2307BDS-E3 | SI2307CDS-E3 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI2307BDS-T1-E3 | MOSFET 30V 3.2A 1.25W | |
| SI2307CDS-T1-GE3 | MOSFET -30V Vds 20V Vgs SOT-23 | ||
| SI2307CDS-T1-E3 | MOSFET -30V Vds 20V Vgs SOT-23 | ||
Micro Commercial Components (MCC) |
SI2307-TP | MOSFET P-Channel MOSFET, SOT-23 package | |
| SI2307 | Nuevo y original | ||
| SI2307 A7SHB | Nuevo y original | ||
| SI2307BDS | 2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB | ||
| SI2307CDS | Nuevo y original | ||
| SI2307CDS-T1 | Nuevo y original | ||
| SI2307DS | MOSFET Transistor, P-Channel, TO-236AB | ||
| SI2307DS-T1 | MOSFET RECOMMENDED ALT 781-SI2307BDS-E3 | ||
| SI2307DS-T1-E3 | MOSFET 30V 3.0A 1.25W | ||
| SI2307DS-T1-GE3 | Nuevo y original | ||
| SI2307DS-TI | Nuevo y original | ||
| SI2307-TP | P-CHANNEL MOSFET, SOT-23 PACKAGE | ||
| SI2307BDS-T1-E3-CUT TAPE | Nuevo y original | ||
| SI2307CDS-T1-GE3-CUT TAPE | Nuevo y original | ||
Vishay |
SI2307BDS-T1-GE3 | MOSFET P-CH 30V 2.5A SOT23-3 | |
| SI2307CDS-T1-E3 | MOSFET P-CH 30V 3.5A SOT23-3 | ||
| SI2307CDS-T1-GE3 | MOSFET P-CH 30V 3.5A SOT23-3 | ||
| SI2307BDS-T1-E3 | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |