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SEMIX6

SEMIX603GAR066HDS vs SEMIX603GB066HDS vs SEMIX603GB12E4P

 
PartNumberSEMIX603GAR066HDSSEMIX603GB066HDSSEMIX603GB12E4P
DescriptionSEMIX, Trench IGBT Module, 600V, 800ASEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A
Fabricante Parte # Descripción RFQ
SEMIX603GAR066HDS SEMIX, Trench IGBT Module, 600V, 800A
SEMIX603GB066HDS Nuevo y original
SEMIX603GB12E4P SEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A
SEMIX604GAL12E4S SEMIX, Trench IGBT Module, 1200V, 800A
SEMIX604GB126HDS SEMIX, Trench IGBT Module, 1200V, 400A
SEMIX604GB12E4S Nuevo y original
SEMIX604GB12T4S POWER IGBT TRANSISTOR
SEMIX604GB12T4V6 Nuevo y original
SEMIX604GB12VS IGBT MODULE, DUAL, 1.2KV, 880A, Transistor Polarity:Dual NPN, DC Collector Current:880A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br
SEMIX653GAL176HDS IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX653GD176HDC IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
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