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SEMIX653GB176HDS

SEMIX653GB176HDS
Mfr. #:
SEMIX653GB176HDS
Fabricante:
SEMIKRON
Descripción:
IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SEMIX653GB176HDS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
SEMIX65, SEMIX6, SEMIX, SEMI, SEM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
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IGBT POWER MODULE; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- RoHS Compliant: Yes
***nell
IGBT MODULE, 2X1700V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1700V; Current Ic Continuous a Max:650A; Voltage, Vce Sat Max:2.45V; Case Style:SEMiX 3s; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1.2V; Current Ic av:650A; Current, Icm Pulsed:900A; Current, Ifs Max:2900A; Time, Rise:90ns; Voltage, Vrrm:1700V
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EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
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Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
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Our well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled 4 Diode are the right choice for your design. | Summary of Features: Extended Operation Temperature T vj op; Low Switching Losses; Low V CEsat; T vj op = 150C; V CEsat with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
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IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
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EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
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TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
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BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SEMIX653GB176HDS
DISTI # 16M0126		SEMIKRONIGBT POWER MODULE,Transistor Polarity:N Channel,DC Collector Current:619A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2V,No. of Pins:16Pins,Product Range:- RoHS Compliant: Yes0
  • 25:$214.1300
  • 10:$227.8300
  • 5:$231.2600
  • 1:$234.6900
SEMIX653GB176HDS
DISTI # 70098315		SEMIKRONIGBT,1700 V,660 A @ 25 DegC,650 A @ 80 DegC,1.7 V @ 25 degC
RoHS: Compliant		0
  • 1:$346.3000
  • 6:$327.8000
  • 42:$311.1700
  • 96:$296.1400
  • 144:$282.5200
Imagen Parte # Descripción
SEMIX653GAL176HDS

Mfr.#: SEMIX653GAL176HDS

OMO.#: OMO-SEMIX653GAL176HDS-1190

 IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS

Mfr.#: SEMIX653GB176HDS

OMO.#: OMO-SEMIX653GB176HDS-1190

 IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX653GD176HDC

Mfr.#: SEMIX653GD176HDC

OMO.#: OMO-SEMIX653GD176HDC-1190

 IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de SEMIX653GB176HDS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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