PartNumber | RGT80TS65DGC11 | RGT80TS65D | RGT80TS65DG |
Description | IGBT Transistors 650V 40A IGBT Stop Trench | ||
Manufacturer | ROHM Semiconductor | - | Rohm Semiconductor |
Product Category | IGBT Transistors | - | IGBTs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | - | Through Hole |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.65 V | - | 1.65 V |
Maximum Gate Emitter Voltage | 30 V | - | +/- 30 V |
Continuous Collector Current at 25 C | 70 A | - | 70 A |
Pd Power Dissipation | 234 W | - | - |
Minimum Operating Temperature | - 40 C | - | - 40 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Series | RGT80TS65D | - | RGT80TS65D |
Packaging | Tube | - | Tube |
Continuous Collector Current Ic Max | 70 A | - | 70 A |
Operating Temperature Range | - 40 C to + 175 C | - | - |
Brand | ROHM Semiconductor | - | - |
Continuous Collector Current | 40 A | - | - |
Gate Emitter Leakage Current | +/- 200 nA | - | +/- 200 nA |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 450 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | RGT80TS65D | - | - |
Unit Weight | 1.340411 oz | - | 1.340411 oz |
Package Case | - | - | TO-247-3 |
Input Type | - | - | Standard |
Mounting Type | - | - | Through Hole |
Supplier Device Package | - | - | TO-247N |
Power Max | - | - | 234W |
Reverse Recovery Time trr | - | - | 58ns |
Current Collector Ic Max | - | - | 70A |
Voltage Collector Emitter Breakdown Max | - | - | 650V |
IGBT Type | - | - | Trench Field Stop |
Current Collector Pulsed Icm | - | - | 120A |
Vce on Max Vge Ic | - | - | 2.1V @ 15V, 40A |
Switching Energy | - | - | - |
Gate Charge | - | - | 79nC |
Td on off 25°C | - | - | 34ns/119ns |
Test Condition | - | - | 400V, 40A, 10 Ohm, 15V |
Pd Power Dissipation | - | - | 234 W |
Collector Emitter Voltage VCEO Max | - | - | 650 V |