RGT8

RGT80TS65DGC11 vs RGT80TS65D vs RGT80TS65DG

 
PartNumberRGT80TS65DGC11RGT80TS65DRGT80TS65DG
DescriptionIGBT Transistors 650V 40A IGBT Stop Trench
ManufacturerROHM Semiconductor-Rohm Semiconductor
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole-Through Hole
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.65 V-1.65 V
Maximum Gate Emitter Voltage30 V-+/- 30 V
Continuous Collector Current at 25 C70 A-70 A
Pd Power Dissipation234 W--
Minimum Operating Temperature- 40 C-- 40 C
Maximum Operating Temperature+ 175 C-+ 175 C
SeriesRGT80TS65D-RGT80TS65D
PackagingTube-Tube
Continuous Collector Current Ic Max70 A-70 A
Operating Temperature Range- 40 C to + 175 C--
BrandROHM Semiconductor--
Continuous Collector Current40 A--
Gate Emitter Leakage Current+/- 200 nA-+/- 200 nA
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Part # AliasesRGT80TS65D--
Unit Weight1.340411 oz-1.340411 oz
Package Case--TO-247-3
Input Type--Standard
Mounting Type--Through Hole
Supplier Device Package--TO-247N
Power Max--234W
Reverse Recovery Time trr--58ns
Current Collector Ic Max--70A
Voltage Collector Emitter Breakdown Max--650V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--120A
Vce on Max Vge Ic--2.1V @ 15V, 40A
Switching Energy---
Gate Charge--79nC
Td on off 25°C--34ns/119ns
Test Condition--400V, 40A, 10 Ohm, 15V
Pd Power Dissipation--234 W
Collector Emitter Voltage VCEO Max--650 V
Fabricante Parte # Descripción RFQ
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RGT80TS65D Nuevo y original
RGT80TS65DG Nuevo y original
RGT80TS65DGC11/TO247NNP Nuevo y original
RGT8BM65D Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-252
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