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RGT8BM65DTL

RGT8BM65DTL
Mfr. #:
RGT8BM65DTL
Fabricante:
Rohm Semiconductor
Descripción:
IGBT Transistors 650V 4A IGBT Stop Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGT8BM65DTL Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RGT8BM65DTL más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-252-3
Estilo de montaje:
SMD / SMT
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.65 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
8 A
Pd - Disipación de energía:
62 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RGT8BM65D
Embalaje:
Carrete
Corriente continua de colector Ic Max:
8 A
Rango de temperatura de funcionamiento:
- 40 C to + 175 C
Marca:
Semiconductor ROHM
Corriente continua del colector:
4 A
Corriente de fuga puerta-emisor:
+/- 200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
2500
Subcategoría:
IGBT
Parte # Alias:
RGT8BM65D
Unidad de peso:
0.139332 oz
Tags
RGT8, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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RGT8BM65D Series 650 V 8 A 62 W Field Stop Trench IGBT - TO-252-3
***i-Key
IGBT TRENCH FIELD 650V 8A TO252
***nell
IGBT, SINGLE, 650V, 8A, TO-252-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 62W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
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IGBT, N-Channel, 600V, 8.5A, D-Pak TO-252AA | Infineon IRG4RC10KDTRPBF
***nell
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
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600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF
***nell
IGBT, D-PAK; DC Collector Current: 8.5A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation Max: 38W; Pulsed Current Icm: 34A; Rise Time: 16ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
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Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descripción Valores Precio
RGT8BM65DTL
DISTI # RGT8BM65DTLTR-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8680
RGT8BM65DTL
DISTI # RGT8BM65DTLCT-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.9260
  • 500:$1.1176
  • 250:$1.2772
  • 100:$1.3602
  • 25:$1.5964
  • 10:$1.6920
  • 1:$1.8800
RGT8BM65DTL
DISTI # RGT8BM65DTLDKR-ND		ROHM SemiconductorIGBT 650V 8A 62W TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.9260
  • 500:$1.1176
  • 250:$1.2772
  • 100:$1.3602
  • 25:$1.5964
  • 10:$1.6920
  • 1:$1.8800
RGT8BM65DTL
DISTI # RGT8BM65DTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R (Alt: RGT8BM65DTL)
RoHS: Compliant
Min Qty: 1
Container: Tape and Reel		Europe - 0
  • 1000:€0.4779
  • 500:€0.5149
  • 100:€0.5579
  • 50:€0.6079
  • 25:€0.6689
  • 10:€0.7439
  • 1:€0.8369
RGT8BM65DTL
DISTI # RGT8BM65DTL		ROHM SemiconductorTrans IGBT Chip N-CH 650V 8A 3-Pin TO-252 T/R - Tape and Reel (Alt: RGT8BM65DTL)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4479
  • 15000:$0.4599
  • 10000:$0.4869
  • 5000:$0.5169
  • 2500:$0.5519
RGT8BM65DTL
DISTI # 755-RGT8BM65DTL		ROHM SemiconductorIGBT Transistors 650V 4A IGBT Stop Trench
RoHS: Compliant		1400
  • 1:$1.8300
  • 10:$1.5500
  • 100:$1.2400
  • 500:$1.0900
  • 1000:$0.8990
  • 2500:$0.8380
  • 5000:$0.8070
  • 10000:$0.7750
RGT8BM65DTL
DISTI # 2519785		ROHM SemiconductorIGBT, SINGLE, 650V, 8A, TO-252-3
RoHS: Compliant		0
  • 1000:$1.4100
  • 500:$1.7000
  • 250:$1.9400
  • 100:$2.0700
  • 25:$2.4300
  • 10:$2.5800
  • 1:$2.8500
RGT8BM65DTL
DISTI # IGBT1479		ROHM SemiconductorIGBT650V8A30VDPack
RoHS: Compliant		Stock DE - 0Stock HK - 0Stock US - 0
  • 2500:$0.7175
  • 5000:$0.6733
  • 7500:$0.6513
RGT8BM65DTLROHM Semiconductor 2500
  • 1:¥14.2929
  • 100:¥8.1041
  • 1250:¥5.1380
  • 2500:¥3.8278
RGT8BM65DTLROHM SemiconductorIGBT Transistors 650V 4A IGBT Stop Trench
RoHS: Compliant		Americas -
    Imagen Parte # Descripción
    RGT8BM65DTL

    Mfr.#: RGT8BM65DTL

    OMO.#: OMO-RGT8BM65DTL

    		 IGBT Transistors 650V 4A IGBT Stop Trench
    RGT8BM65DTL

    Mfr.#: RGT8BM65DTL

    OMO.#: OMO-RGT8BM65DTL-ROHM-SEMI

    		 IGBT Transistors 650V 4A Field Stop Trench IGBT
    RGT8BM65D

    Mfr.#: RGT8BM65D

    OMO.#: OMO-RGT8BM65D-1190

    		 Insulated Gate Bipolar Transistor, 8A I(C), 650V V(BR)CES, N-Channel, TO-252
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de RGT8BM65DTL es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,83 US$
    1,83 US$
    10
    1,55 US$
    15,50 US$
    100
    1,24 US$
    124,00 US$
    500
    1,09 US$
    545,00 US$
    1000
    0,90 US$
    899,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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