R6004E

R6004END3TL1 vs R6004E vs R6004END

 
PartNumberR6004END3TL1R6004ER6004END
DescriptionMOSFET NCH 600V 4A POWER MOSFET
ManufacturerROHM SemiconductorROHM Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V--
Id Continuous Drain Current4 A--
Rds On Drain Source Resistance980 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge15 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation59 W--
ConfigurationSingle1 N-Channel-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Transistor Type1 N-Channel1 N-Channel-
BrandROHM Semiconductor--
Fall Time40 ns40 ns-
Product TypeMOSFET--
Rise Time22 ns22 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55 ns55 ns-
Typical Turn On Delay Time22 ns22 ns-
Series-R6004END-
Package Case-SOT-428-3-
Pd Power Dissipation-20 W-
Vgs Gate Source Voltage-+/- 20 V-
Id Continuous Drain Current-4 A-
Vds Drain Source Breakdown Voltage-600 V-
Vgs th Gate Source Threshold Voltage-2 V-
Rds On Drain Source Resistance-980 mOhms-
Qg Gate Charge-15 nC-
Forward Transconductance Min-1.5 S-
Fabricante Parte # Descripción RFQ
R6004ENX MOSFET 10V Drive Nch MOSFET
R6004ENJTL MOSFET 10V Drive Nch MOSFET
R6004END3TL1 MOSFET NCH 600V 4A POWER MOSFET
R6004ENDTL MOSFET 10V Drive Nch MOSFET
R6004E Nuevo y original
R6004END Nuevo y original
R6004END3TL1 Power MOSFET N-Channel 600V 4A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6004END3TL1)
R6004ENDTL MOSFET N-CH 600V 4A CPT3
R6004ENJ Nuevo y original
R6004ENJTL MOSFET N-CH 600V 4A LPT
R6004ENNX Nuevo y original
R6004ENX MOSFET N-CH 600V 4A TO220
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