R6004ENDTL

Mfr. #:: R6004ENDTL
Fabricante:: Rohm Semiconductor
Descripción:: MOSFET 10V Drive Nch MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: R6004ENDTL Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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Atributo del producto
Valor de atributo

Fabricante:: Semiconductor ROHM

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: TO-252-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 600 V

Id - Corriente de drenaje continua:: 4 A

Rds On - Resistencia de la fuente de drenaje:: 980 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 15 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 20 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Carrete

Altura:: 2.5 mm

Longitud:: 6.7 mm

Producto:: MOSFET

Tipo de transistor:: 1 N-channel

Escribe:: MOSFET de potencia

Ancho:: 5.8 mm

Marca:: Semiconductor ROHM

Transconductancia directa - Mín .:: 1.5 S

Otoño:: 40 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 22 ns

Cantidad de paquete de fábrica:: 2500

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 55 ns

Tiempo típico de retardo de encendido:: 22 ns

Parte # Alias:: R6004END

Tags: R6004END, R6004EN, R6004E, R6004, R600, R60

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

R6004ENDTL Descripción

***p One Stop: Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) CPT T/R

***nell: MOSFET, N-CH, 600V, 4A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 58W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)

***S: French Electronic Distributor since 1988

***ure Electronics: Single N-Channel 600 V 950 mOhm 13 nC CoolMOS Power Mosfet - TO-252-3

*** Source Electronics: Trans MOSFET N-CH 600V 4.4A 3-Pin(2+Tab) DPAK T/R / Metal Oxide Semiconductor Field Effect Transistor | MOSFET N-CH 600V 4.4A TO252

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO252-3, RoHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:5.7A; On Resistance Rds(On):0.68Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,600V,8.1A,TO252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.4A; Power Dissipation Pd:37W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***icroelectronics: N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package

*** Electronics: STMICROELECTRONICS STD9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V

***nell: MOSFET, N CHANNEL, 650V, 5A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

***ure Electronics: N-Channel 600 V 4.3 A 1000 mO 13 nC CoolMOS CE Power Transistor - DPAK

***ical: Trans MOSFET N-CH 600V 4.3A 3-Pin(2+Tab) DPAK T/R

*** Electronics: COOLMOS N-CHANNEL POWER MOSFET

***et Europe: Trans MOSFET N-CH 500(Min)V 5A 3-Pin TO-252 T/R

***ical: Metal Oxide Semiconductor Field Effect Transistor Opt

*** Electronics: COOLMOS N-CHANNEL POWER MOSFET

***icroelectronics: N-channel 600 V, 5 A, 0.84 Ohm typ., MDmesh(TM) II Power MOSFET in DPAK package

***p One Stop: Trans MOSFET N-CH 600V 5A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: STD7ANM60N Series 600 V 5 A 0.9 Ohm N-Channel MDmesh II Power Mosfet - D-PAK-3

***nell: MOSFET, AEC-Q101, N-CH, 600V, 5A, 45W; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***nsix Microsemi: Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***icroelectronics: N-channel 650 V, 0.98 Ohm typ., 5 A MDmesh M2 Power MOSFET in a DPAK package

*** Electronics: STMICROELECTRONICS STD7N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.98 ohm, 10 V, 3 V

***nell: MOSFET, N CHANNEL, 650V, 5A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.98ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)

Market price

Parte #	Mfg.	Descripción	Valores	Precio
R6004ENDTL DISTI # R6004ENDTLCT-ND	ROHM Semiconductor	MOSFET N-CH 600V 4A CPT3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	82In Stock	1000:$0.5639 500:$0.7143 100:$0.8647 10:$1.1090 1:$1.2400
R6004ENDTL DISTI # R6004ENDTLDKR-ND	ROHM Semiconductor	MOSFET N-CH 600V 4A CPT3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	82In Stock	1000:$0.5639 500:$0.7143 100:$0.8647 10:$1.1090 1:$1.2400
R6004ENDTL DISTI # R6004ENDTLTR-ND	ROHM Semiconductor	MOSFET N-CH 600V 4A CPT3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.5110
R6004ENDTL DISTI # R6004ENDTL	ROHM Semiconductor	Trans MOSFET N-CH 600V ±4A 3-Pin TO-252 T/R - Tape and Reel (Alt: R6004ENDTL) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4679 15000:$0.4809 10000:$0.5089 5000:$0.5409 2500:$0.5769
R6004ENDTL DISTI # R6004ENDTL	ROHM Semiconductor	Trans MOSFET N-CH 600V ±4A 3-Pin TO-252 T/R (Alt: R6004ENDTL) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1000:€0.4427 500:€0.5693 250:€0.6199 100:€0.6831 10:€0.8729 1:€0.9740
R6004ENDTL DISTI # 755-R6004ENDTL	ROHM Semiconductor	MOSFET 10V Drive Nch MOSFET RoHS: Compliant	0
R6004ENDTL	ROHM Semiconductor		1216	1167:$0.7800 625:$0.8580 1:$2.0800
R6004ENDTL DISTI # 2630084	ROHM Semiconductor	MOSFET, N-CH, 600V, 4A, TO-252 RoHS: Compliant	0	1000:$0.8500 500:$1.0800 100:$1.3100 10:$1.6800 1:$1.8700
R6004ENDTL DISTI # 2630084	ROHM Semiconductor	MOSFET, N-CH, 600V, 4A, TO-252	0	500:£0.5630 250:£0.6220 100:£0.6810 10:£0.9290 1:£1.1200
R6004ENDTL	ROHM Semiconductor	RoHS(ship within 1day)	1520	1:$1.4500 10:$1.0900 50:$0.7300 100:$0.5800 500:$0.5400 1000:$0.5200

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: R6004KNJTL OMO.#: OMO-R6004KNJTL	MOSFET Nch 600V 4A Si MOSFET
	Mfr.#: R6004KNX OMO.#: OMO-R6004KNX	MOSFET Nch 600V 4A Si MOSFET
	Mfr.#: R6004ENX OMO.#: OMO-R6004ENX	MOSFET 10V Drive Nch MOSFET
	Mfr.#: R6004ENDTL OMO.#: OMO-R6004ENDTL	MOSFET 10V Drive Nch MOSFET
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	Mfr.#: R6004CND OMO.#: OMO-R6004CND-1190	Nuevo y original
	Mfr.#: R6004END3TL1 OMO.#: OMO-R6004END3TL1-1190	Power MOSFET N-Channel 600V 4A 3-Pin TO-252 Emboss T/R - Tape and Reel (Alt: R6004END3TL1)
	Mfr.#: R6004ENDTL OMO.#: OMO-R6004ENDTL-ROHM-SEMI	MOSFET N-CH 600V 4A CPT3
	Mfr.#: R6004ENJ OMO.#: OMO-R6004ENJ-1190	Nuevo y original
	Mfr.#: R6004JND3 OMO.#: OMO-R6004JND3-1190	Nuevo y original

Disponibilidad

Valores:: Available
En orden:: 5000
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R6004ENDTL

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes