R6004ENX

Mfr. #:: R6004ENX
Fabricante:: Rohm Semiconductor
Descripción:: MOSFET 10V Drive Nch MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: R6004ENX Ficha de datos
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Más información:: R6004ENX más información

Atributo del producto
Valor de atributo

Fabricante:: Semiconductor ROHM

Categoria de producto:: MOSFET

RoHS:: Y

Tecnología:: Si

Estilo de montaje:: A través del orificio

Paquete / Caja:: TO-220FP-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 600 V

Id - Corriente de drenaje continua:: 4 A

Rds On - Resistencia de la fuente de drenaje:: 900 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2 V

Vgs - Voltaje puerta-fuente:: 20 V

Qg - Carga de puerta:: 15 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 150 C

Pd - Disipación de energía:: 40 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Carrete

Serie:: Super Junction-MOS ES

Tipo de transistor:: 1 N-Channel

Marca:: Semiconductor ROHM

Transconductancia directa - Mín .:: 1.5 S

Otoño:: 40 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 22 ns

Cantidad de paquete de fábrica:: 500

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 55 ns

Tiempo típico de retardo de encendido:: 22 ns

Parte # Alias:: R6004ENX

Unidad de peso:: 0.000353 oz

Tags: R6004EN, R6004E, R6004, R600, R60

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
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R6004ENX Descripción

***p One Stop: Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220FM Bulk

***ark: Mosfet, N-Ch, 600V, 4A, To-220Fm; Transistor Polarity:n Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.9Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Rohs Compliant: Yes

***i-Key: MOSFET N-CH 600V 4A TO220FM

*** Electronics: MOSFET N-CH 600V 4A TO220

***icroelectronics: N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N-CH, 600V, 5A, 150DEG C, 60W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package

***ure Electronics: STF7N60M2 Series 600V 0.95 Ohm N-Ch MDmesh II Plus Low Qg Power MOSFET-TO-220FP

*** electronic: Transistor MOSFET N-Ch. 5A/600V TO220FP

***ical: Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 5A 20W 950m´Î@10V2.5A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***(Formerly Allied Electronics): MOSFET N-Ch 600V 5A MDmesh II TO-220FP

***ark: MOSFET, N-CH, 600V, 5A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 600V, 5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.86ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 20W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Plus Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)

***icroelectronics: N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package

*** Electronics: STMICROELECTRONICS STF9N65M2 Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V

***ure Electronics: N-Channel 650 V 900 mOhm Flange Mount MDmesh Power Mosfet - TO-220FP

***ical: Trans MOSFET N-CH 650V 5A 3-Pin(3+Tab) TO-220FP Tube

***nell: MOSFET, N CHANNEL, 650V, 5A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.79ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V

***ical: Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FP

***ark: Mosfet, N-Ch, 500V, 7.6A, To-220Fp; Transistor Polarity:n Channel; Continuous Drain Current Id:7.6A; Drain Source Voltage Vds:500V; On Resistance Rds(On):0.72Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon SCT: 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS

***ineon: 500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox

***emi: Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220F

***ow.cn: Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220FP Tube

***enic: 600V 4.5A 33W 2.5´Î@10V2.25A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

***nell: MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 2.5ohm; Rds(on) Test V; Available until stocks are exhausted Alternative available

***r Electronics: Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N, TO-220F; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:600V; Current, Id Cont:4.5A; Resistance, Rds On:2.5ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220F; Termination ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

***itex: Transistor: N-MOSFET; unipolar; 650V; 4.5A; 0.95ohm; 31W; -55+150 deg.C; THT; TO220FP

***ineon SCT: Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220FP Tube, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):950mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.5A; Package / Case:TO-220F; Power Dissipation Pd:31W; Power Dissipation Pd:31W; Pulse Current Idm:13.5A; Termination Type:Through Hole; Voltage Vds:600V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

R6004ENX Más información

Super Junction-MOS EN & KN Series MOSFETs: ROHM Semiconductor Super Junction-MOS EN and KN Series MOSFETs combine the low-noise characteristics of planar MOSFETs and the low ON-resistance characteristics of Super Junction MOSFETs. The EN Series is offered in 600V and 650V versions, and is recommended for power supply circuits requiring noise countermeasures. The fast switching KN Series is offered in 600V, 650V, and 800V variants, and is recommended for power supply circuits demanding lower loss and greater efficiency.

Silicon Power MOSFETs: ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
R6004ENX DISTI # R6004ENX-ND	ROHM Semiconductor	MOSFET N-CH 600V 4A TO220 RoHS: Compliant Min Qty: 1 Container: Bulk	182In Stock	5000:$0.6118 2500:$0.6440 1000:$0.6900 500:$0.8740 100:$1.0580 10:$1.3570 1:$1.5200
R6004ENX DISTI # R6004ENX	ROHM Semiconductor	Trans MOSFET N-CH 600V ±4A 3-Pin TO-220FM Bulk (Alt: R6004ENX) RoHS: Compliant Min Qty: 1 Container: Bulk	Europe - 0	5000:€0.5190 1000:€0.5300 500:€0.6160 250:€0.6340 100:€0.6530 25:€0.6710 5:€0.6890
R6004ENX DISTI # R6004ENX	ROHM Semiconductor	Trans MOSFET N-CH 600V ±4A 3-Pin TO-220FM Bulk - Tape and Reel (Alt: R6004ENX) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	5000:$0.4619 3000:$0.4739 2000:$0.5019 1000:$0.5339 500:$0.5689
R6004ENX DISTI # 755-R6004ENX	ROHM Semiconductor	MOSFET 10V Drive Nch MOSFET RoHS: Compliant	374	1:$1.5000 10:$1.2800 100:$0.9890 500:$0.8740 1000:$0.6890 2500:$0.6110 10000:$0.5880
R6004ENX	ROHM Semiconductor		4	3:$1.9800 1:$2.6400
R6004ENX	ROHM Semiconductor	RoHS(ship within 1day)	6	1:$1.8300 10:$1.3700 50:$0.9100 100:$0.7300 500:$0.6800 1000:$0.6600
R6004ENX	ROHM Semiconductor		500	1:¥10.9889 100:¥6.2307 500:¥3.9503
R6004ENX DISTI # 2630086	ROHM Semiconductor	MOSFET, N-CH, 600V, 4A, TO-220FM RoHS: Compliant	0	2500:$0.9710 1000:$1.0400 500:$1.3200 100:$1.6000 10:$2.0500 1:$2.2900
R6004ENX DISTI # 2630086	ROHM Semiconductor	MOSFET, N-CH, 600V, 4A, TO-220FM	0	500:£0.5220 250:£0.5570 100:£0.5910 10:£0.8270 1:£1.0400

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Disponibilidad

Valores:: 374
En orden:: 2357
Ingrese la cantidad:

El precio actual de R6004ENX es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,50 US$~~; ~~1,50 US$~~

10: ~~1,28 US$~~; ~~12,80 US$~~

100: ~~0,99 US$~~; ~~98,90 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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R6004ENX

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes