| PartNumber | QPD2730 | QPD2194SR | QPD2195SR |
| Description | RF JFET Transistors 2.575-2.635GHz 48V 110/220 Watt GaN | RF JFET Transistors 300 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor | RF JFET Transistors 400 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor |
| Manufacturer | Qorvo | Qorvo | Qorvo |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | HEMT |
| Technology | GaN SiC | GaN SiC | GaN SiC |
| Gain | 16 dB | 19.1 dB | 20.4 dB |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 48 V | - | - |
| Id Continuous Drain Current | 210 mA | - | - |
| Output Power | 36 W | 371 W | 400 W |
| Maximum Drain Gate Voltage | 55 V | 55 V | 55 V |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Pd Power Dissipation | 18.6 W | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | NI780-4 | NI400-2 | NI780-2 |
| Packaging | Waffle | Reel | Reel |
| Configuration | Dual | Single | Single |
| Operating Frequency | 2.575 GHz to 2.635 GHz | 1.8 GHz to 2.2 GHz | 1.8 GHz to 2.2 GHz |
| Operating Temperature Range | - 40 C to + 85 C | - | - |
| Series | QPD | - | - |
| Brand | Qorvo | Qorvo | Qorvo |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Factory Pack Quantity | 25 | 100 | 100 |
| Subcategory | Transistors | Transistors | Transistors |
| Vgs th Gate Source Threshold Voltage | - 2.7 V, - 4.75 V | - | - |
| Part # Aliases | 1131813 | - | - |
| Development Kit | - | QPD2194PCB4B01 | QPD2195PCB4B01 |