NVD5

NVD5865NLT4G vs NVD5863NLT4G-VF01 vs NVD5865NL

 
PartNumberNVD5865NLT4GNVD5863NLT4G-VF01NVD5865NL
DescriptionMOSFET NFET 60V 34A 18MOHMMOSFET NFET DPAK 60V 73A 8.2MOHM
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3DPAK-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current46 A82 A-
Rds On Drain Source Resistance16 mOhms7.1 mOhms-
Vgs th Gate Source Threshold Voltage2 V1 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge29 nC70 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation71 W96 W-
ConfigurationSingleSingleSingle
QualificationAEC-Q101AEC-Q101-
PackagingReelReelReel
SeriesNVD5865NL-NVD5865NL
Transistor Type1 N-Channel-1 N-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min15 S--
Fall Time4.4 ns55 ns4.4 ns
Product TypeMOSFETMOSFET-
Rise Time12.4 ns24.4 ns12.4 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns37.6 ns26 ns
Typical Turn On Delay Time8.4 ns12.8 ns8.4 ns
Part # AliasesSVD5865NLT4G--
Unit Weight0.139332 oz-0.139332 oz
Channel Mode-Enhancement-
Package Case--TO-252-3
Pd Power Dissipation--71 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--46 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--2 V
Rds On Drain Source Resistance--16 mOhms
Qg Gate Charge--29 nC
Forward Transconductance Min--15 S
Fabricante Parte # Descripción RFQ
NVD5C454NT4G MOSFET T6 40V DPAK EXP
NVD5C454NLT4G MOSFET T6 40V DPAK EXP
NVD5C668NLT4G MOSFET T6 60V LL DPAK
NVD5C434NT4G MOSFET T6 40V SL IN DPAK
NVD5890NT4G MOSFET 8-64MHZ 3.3V GP EMI
NVD5865NLT4G MOSFET NFET 60V 34A 18MOHM
NVD5890NLT4G MOSFET NFET DPAK 40V 123A 3.7MOH
NVD5C632NLT4G MOSFET T6 60V LL DPAK
NVD5C478NT4G MOSFET T6 40V DPAK EXP
NVD5C478NLT4G MOSFET T6 40V DPAK EXP
NVD5C486NT4G MOSFET T6 40V DPAK EXP
NVD5C460NLT4G MOSFET T6 40V DPAK EXP
NVD5C464NLT4G MOSFET T6 40V DPAK EXP
NVD5890NT4G-VF01 MOSFET NFET DPAK 40V 100A 3.7MOH
NVD5863NLT4G-VF01 MOSFET NFET DPAK 60V 73A 8.2MOHM
NVD5890NLT4G-VF01 MOSFET NFET DPAK 40V 123A 3.7MOH
NVD5890NLT4G-VF01 MOSFET NFET DPAK 40V 123A 3.7MOH
NVD5863NLT4G-VF01 Trans MOSFET N-CH 60V 82A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5863NLT4G-VF01)
NVD5865NL Nuevo y original
NVD5867NL Nuevo y original
NVD5890N Nuevo y original
NVD5890NL Nuevo y original
NVD5890NT4G-VF01 Trans MOSFET N-CH 40V 123A 3-Pin DPAK T/R - Tape and Reel (Alt: NVD5890NT4G-VF01)
NVD5C464N Nuevo y original
NVD5C668NL Nuevo y original
ON Semiconductor
ON Semiconductor
NVD5C486NLT4G MOSFET T6 40V DPAK EXP
NVD5C464NT4G MOSFET T6 40V SL DPAK
NVD5C446NT4G MOSFET T6 40V SL DPAK
NVD5C460NT4G MOSFET T6 40V DPAK EXP
NVD5867NLT4G MOSFET N-CH 60V DPAK
NVD5867NLT4G-TB01 MOSFET N-CH 60V 22A DPAK DPAK
NVD5890NT4G MOSFET N-CH 40V 100A DPAK
NVD5C434NT4G MOSFET N-CHANNEL 40V 163A DPAK
NVD5C446NT4G MOSFET N-CHANNEL 40V 101A DPAK
NVD5C648NLT4G T6 60V LL DPAK
NVD5863NLT4G IGBT Transistors MOSFET NFET 60V 73A 8.2MOHM
NVD5865NLT4G IGBT Transistors MOSFET NFET 60V 34A 18MOHM
NVD5890NLT4G RF Bipolar Transistors MOSFET NFET DPAK 40V 123A 3.7MOH
NVD5C464NT4G MOSFET N-CHANNEL 40V 59A DPAK
NVD5C668NLT4G MOSFET N-CHANNEL 60V 49A DPAK
NVD5C454NLT4G Power MOSFET
NVD5C454NT4G T6 40V DPAK EXPANSION AND
NVD5C460NLT4G Power MOSFET
NVD5C460NT4G Power MOSFET
NVD5C464NLT4G T6 40V DPAK EXPANSION AND
NVD5C478NLT4G Power MOSFET
NVD5C478NT4G Power MOSFET
NVD5C486NLT4G Power MOSFET
NVD5C486NT4G T6 40V DPAK EXPANSION AND
NVD5C632NLT4G Single N-Channel Power MOSFET
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