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| PartNumber | NVD5C684NLT4G | NVD5C688NLT4G |
| Description | MOSFET T6 60V LL DPAK | MOSFET T6 60V LL DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 38 A | 17 A |
| Rds On Drain Source Resistance | 13.7 mOhms | 22.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 16 V |
| Qg Gate Charge | 9.6 nC | 7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 27 W | 18 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Series | NVD5C684NL | NVD5C688NL |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 30 S | 20 S |
| Fall Time | 40 ns | 24 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 43 ns | 42 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 25 ns | 11 ns |
| Typical Turn On Delay Time | 8 ns | 8 ns |
| Unit Weight | 0.011993 oz | 0.011993 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
ON Semiconductor |
NVD5C684NLT4G | MOSFET T6 60V LL DPAK | |
| NVD5C688NLT4G | MOSFET T6 60V LL DPAK | ||
| NVD5C688NLT4G | MOSFET N-CHANNEL 60V 17A DPAK | ||
| NVD5C684NLT4G | MOSFET N-CHANNEL 60V 38A DPAK | ||
| NVD5E006A | Nuevo y original |