PartNumber | NP100P04PDG-E1-AY | NP100P04 | NP100P04PDG |
Description | MOSFET LOW VOLTAGE POWER MOSFET | ||
Manufacturer | Renesas Electronics | NEC | NEC |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | TO-263-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 3.5 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 1800 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 4.45 mm | - | - |
Length | 10 mm | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 9.15 mm | - | - |
Brand | Renesas Electronics | - | - |
Fall Time | 100 ns | - | - |
Moisture Sensitive | Yes | - | - |
Product Type | MOSFET | - | - |
Rise Time | 30 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 300 ns | - | - |
Typical Turn On Delay Time | 38 ns | - | - |
Unit Weight | 0.077603 oz | - | - |