 | | | |
| PartNumber | NP100N055PUK-E1-AY | NP100P04PDG-E1-AY | NP100P04PLG-E1-AY |
| Description | MOSFET POWER AUTO MOS MP-25LZP ANL2 OTHER | MOSFET LOW VOLTAGE POWER MOSFET | MOSFET MOSFET |
| Manufacturer | Renesas Electronics | Renesas Electronics | Renesas Electronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
| Packaging | Tube | Tube | Tube |
| Brand | Renesas Electronics | Renesas Electronics | Renesas Electronics |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.077603 oz | 0.077603 oz | 0.077603 oz |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | P-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 100 A | - |
| Rds On Drain Source Resistance | - | 3.5 mOhms | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 1800 mW | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 4.45 mm | - |
| Length | - | 10 mm | - |
| Transistor Type | - | 1 P-Channel | - |
| Width | - | 9.15 mm | - |
| Fall Time | - | 100 ns | - |
| Rise Time | - | 30 ns | - |
| Typical Turn Off Delay Time | - | 300 ns | - |
| Typical Turn On Delay Time | - | 38 ns | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Renesas Electronics |
NP100P06PLG-E1-AY | MOSFET MOSFET | |
| NP100N055PUK-E1-AY | MOSFET POWER AUTO MOS MP-25LZP ANL2 OTHER | ||
| NP100P04PDG-E1-AY | MOSFET LOW VOLTAGE POWER MOSFET | ||
| NP100P04PLG-E1-AY | MOSFET MOSFET | ||
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