MT3S113

MT3S113(TE85L,F) vs MT3S113(TE85LF)CT-ND vs MT3S113

 
PartNumberMT3S113(TE85L,F)MT3S113(TE85LF)CT-NDMT3S113
DescriptionRF Bipolar Transistors RF Bipolar Transistor .1A 800mW
ManufacturerToshiba-TOSHIBA
Product CategoryRF Bipolar Transistors-IC Chips
RoHSY--
SeriesMT3S113--
Transistor TypeBipolar--
TechnologySiGe--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min200--
Collector Emitter Voltage VCEO Max5.3 V--
Emitter Base Voltage VEBO0.6 V--
Continuous Collector Current100 mA--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseTO-236-3--
PackagingReel--
Operating Frequency12.5 GHz--
BrandToshiba--
Maximum DC Collector Current100 mA--
Pd Power Dissipation800 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Fabricante Parte # Descripción RFQ
Toshiba
Toshiba
MT3S113P(TE12L,F) RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W
MT3S113TU,LF RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
MT3S113(TE85L,F) RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
MT3S113TULF Trans RF BJT NPN 5.3V 0.1A 3-Pin UFM - Tape and Reel (Alt: MT3S113TU,LF)
MT3S113(TE85LF)CT-ND Nuevo y original
MT3S113(TE85LF)DKR-ND Nuevo y original
MT3S113(TE85LF)TR-ND Nuevo y original
MT3S113P(TE12LF)CT-ND Nuevo y original
MT3S113P(TE12LF)DKR-ND Nuevo y original
MT3S113P(TE12LF)TR-ND Nuevo y original
MT3S113TULFCT-ND Nuevo y original
MT3S113TULFDKR-ND Nuevo y original
MT3S113TULFTR-ND Nuevo y original
MT3S113 Nuevo y original
MT3S113P Nuevo y original
MT3S113TU Nuevo y original
MT3S113TU , MAX6707SKA Nuevo y original
MT3S113TU(TE85L) Nuevo y original
MT3S113TU,LF(T Nuevo y original
MT3S113TULF(T Nuevo y original
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