PartNumber | KSD363O | KSD362N | KSD363OTU |
Description | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Sil | Bipolar Transistors - BJT NPN Epitaxial Sil |
Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 120 V | 70 V | 120 V |
Collector Base Voltage VCBO | 300 V | 150 V | 300 V |
Emitter Base Voltage VEBO | 8 V | 8 V | 8 V |
Collector Emitter Saturation Voltage | 1 V | - | - |
Maximum DC Collector Current | 6 A | 5 A | 6 A |
Gain Bandwidth Product fT | 10 MHz | 10 MHz | 10 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
DC Current Gain hFE Max | 240 | 140 | - |
Height | 9.4 mm (Max) | 9.4 mm (Max) | 9.4 mm (Max) |
Length | 10.1 mm (Max) | 10.1 mm (Max) | 10.1 mm (Max) |
Packaging | Bulk | Bulk | Bulk |
Width | 4.7 mm (Max) | 4.7 mm (Max) | 4.7 mm (Max) |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 6 A | 5 A | - |
DC Collector/Base Gain hfe Min | 40 | 20 | 70 |
Pd Power Dissipation | 40 W | 40 W | 40000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 200 | 200 | 200 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.080072 oz | 0.080072 oz | 0.080072 oz |