KSD362N

KSD362N
Mfr. #:
KSD362N
Fabricante:
ON Semiconductor / Fairchild
Descripción:
Bipolar Transistors - BJT NPN Epitaxial Sil
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
KSD362N Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
KSD362N DatasheetKSD362N Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores bipolares - BJT
RoHS:
Y
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Polaridad del transistor:
NPN
Configuración:
Único
Voltaje colector-emisor VCEO Max:
70 V
Colector- Voltaje base VCBO:
150 V
Emisor- Voltaje base VEBO:
8 V
Corriente máxima del colector de CC:
5 A
Producto de ganancia de ancho de banda fT:
10 MHz
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Ganancia de corriente CC hFE Max:
140
Altura:
9.4 mm (Max)
Longitud:
10.1 mm (Max)
Embalaje:
A granel
Ancho:
4.7 mm (Max)
Marca:
ON Semiconductor / Fairchild
Corriente continua del colector:
5 A
Colector de CC / Ganancia base hfe Min:
20
Pd - Disipación de energía:
40 W
Tipo de producto:
BJT - Transistores bipolares
Cantidad de paquete de fábrica:
200
Subcategoría:
Transistores
Unidad de peso:
0.080072 oz
Tags
KSD362, KSD36, KSD3, KSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
KSD362N
DISTI # KSD362N-ND
ON SemiconductorTRANS NPN 70V 5A TO-220
RoHS: Compliant
Min Qty: 1200
Container: Bulk
Limited Supply - Call
    Imagen Parte # Descripción
    KSD362N

    Mfr.#: KSD362N

    OMO.#: OMO-KSD362N

    Bipolar Transistors - BJT NPN Epitaxial Sil
    KSD471AGBU

    Mfr.#: KSD471AGBU

    OMO.#: OMO-KSD471AGBU

    Bipolar Transistors - BJT NPN Epitaxial Sil
    KSD-01FH85

    Mfr.#: KSD-01FH85

    OMO.#: OMO-KSD-01FH85-1190

    Nuevo y original
    KSD-9700

    Mfr.#: KSD-9700

    OMO.#: OMO-KSD-9700-1190

    Nuevo y original
    KSD205AC3

    Mfr.#: KSD205AC3

    OMO.#: OMO-KSD205AC3-1190

    Nuevo y original
    KSD363Y

    Mfr.#: KSD363Y

    OMO.#: OMO-KSD363Y-ON-SEMICONDUCTOR

    TRANS NPN 120V 6A TO-220
    KSD401-Y

    Mfr.#: KSD401-Y

    OMO.#: OMO-KSD401-Y-1190

    Nuevo y original
    KSD471AG

    Mfr.#: KSD471AG

    OMO.#: OMO-KSD471AG-1190

    Nuevo y original
    KSD471AY

    Mfr.#: KSD471AY

    OMO.#: OMO-KSD471AY-1190

    Nuevo y original
    KSD882-O

    Mfr.#: KSD882-O

    OMO.#: OMO-KSD882-O-1190

    Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    1500
    Ingrese la cantidad:
    El precio actual de KSD362N es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Empezar con
    Nuevos productos
    • Gate Drivers
      The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
    • NCP137 700 mA LDO Regulators
      ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
    • Compare KSD362N
      KSD362 vs KSD362N vs KSD362R
    • NCP114 Low Dropout Regulators
      ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
    • LC717A00AR Touch Sensor
      These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
    • FDMQ86530L Quad-MOSFET
      ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
    Top