PartNumber | IXTP120P065T | IXTP120N04T2 | IXTP120N075T2 |
Description | MOSFET -120 Amps -65V 0.01 Rds | MOSFET 120 Amps 40V | IGBT Transistors MOSFET 120 Amps 75V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | P-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 65 V | 40 V | - |
Id Continuous Drain Current | 120 A | 120 A | - |
Rds On Drain Source Resistance | 10 mOhms | 6.1 mOhms | - |
Vgs Gate Source Voltage | 15 V | 20 V | - |
Qg Gate Charge | 185 nC | 58 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 175 C |
Pd Power Dissipation | 298 W | 200 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | IXTP120P065 | IXTP120N04 | IXTP120N075 |
Transistor Type | 1 P-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | - |
Fall Time | 21 ns | 11 ns | 18 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 28 ns | 8 ns | 33 ns |
Factory Pack Quantity | 50 | 50 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 38 ns | 16 ns | 21 ns |
Typical Turn On Delay Time | 31 ns | 14 ns | 13 ns |
Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Tradename | - | HiPerFET | TrenchT2 |
Height | - | 16 mm | - |
Length | - | 10.66 mm | - |
Type | - | TrenchT2 Power MOSFET | - |
Width | - | 4.83 mm | - |
Forward Transconductance Min | - | 28 S | - |
Package Case | - | - | TO-220-3 |
Pd Power Dissipation | - | - | 250 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 120 A |
Vds Drain Source Breakdown Voltage | - | - | 75 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 7.7 mOhms |
Qg Gate Charge | - | - | 78 nC |
Forward Transconductance Min | - | - | 38 S |