PartNumber | IXTP120P065T | IXTP12N50P | IXTP120N04T2 |
Description | MOSFET -120 Amps -65V 0.01 Rds | MOSFET 12 Amps 500V 0.5 Ohm Rds | MOSFET 120 Amps 40V |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 65 V | 500 V | 40 V |
Id Continuous Drain Current | 120 A | 12 A | 120 A |
Rds On Drain Source Resistance | 10 mOhms | 500 mOhms | 6.1 mOhms |
Vgs Gate Source Voltage | 15 V | 30 V | 20 V |
Qg Gate Charge | 185 nC | 29 nC | 58 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 298 W | 200 W | 200 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Series | IXTP120P065 | IXTP12N50P | IXTP120N04 |
Transistor Type | 1 P-Channel | 1 N-Channel | 1 N-Channel |
Brand | IXYS | IXYS | IXYS |
Fall Time | 21 ns | 20 ns | 11 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 28 ns | 27 ns | 8 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 38 ns | 65 ns | 16 ns |
Typical Turn On Delay Time | 31 ns | 22 ns | 14 ns |
Unit Weight | 0.081130 oz | 0.081130 oz | 0.081130 oz |
Vgs th Gate Source Threshold Voltage | - | 5.5 V | 4 V |
Tradename | - | Polar | HiPerFET |
Height | - | 16 mm | 16 mm |
Length | - | 10.66 mm | 10.66 mm |
Type | - | Polar Power MOSFET | TrenchT2 Power MOSFET |
Width | - | 4.83 mm | 4.83 mm |
Forward Transconductance Min | - | 7.5 S | 28 S |