IXTP12N65X2

IXTP12N65X2
Mfr. #:
IXTP12N65X2
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCHULTRAJNCTX2CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTP12N65X2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTP12N65X2 DatasheetIXTP12N65X2 Datasheet (P4-P6)
ECAD Model:
Más información:
IXTP12N65X2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
12 A
Rds On - Resistencia de la fuente de drenaje:
300 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
17.7 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
180 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Otoño:
16 ns
Tipo de producto:
MOSFET
Hora de levantarse:
24 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
52 ns
Tiempo típico de retardo de encendido:
23 ns
Tags
IXTP12N, IXTP12, IXTP1, IXTP, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Parte # Mfg. Descripción Valores Precio
IXTP12N65X2
DISTI # IXTP12N65X2-ND
IXYS CorporationMOSFET N-CH 650V 12A TO-220
RoHS: Compliant
Min Qty: 50
Container: Tube
Temporarily Out of Stock
  • 50:$2.3500
IXTP12N65X2
DISTI # 02AC9840
IXYS CorporationMOSFET, N-CH, 650V, 12A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,Power RoHS Compliant: Yes2
  • 1:$2.6100
IXTP12N65X2
DISTI # 2674787
IXYS CorporationMOSFET, N-CH, 650V, 12A, TO-220AB
RoHS: Compliant
0
  • 100:£2.2500
  • 10:£2.2900
  • 1:£2.3400
IXTP12N65X2
DISTI # 2674787
IXYS CorporationMOSFET, N-CH, 650V, 12A, TO-220AB
RoHS: Compliant
0
  • 500:$2.0600
  • 250:$2.1500
  • 100:$2.2700
  • 25:$2.4000
  • 10:$2.7200
  • 1:$2.9100
Imagen Parte # Descripción
IXTP1N100P

Mfr.#: IXTP1N100P

OMO.#: OMO-IXTP1N100P

MOSFET 1 Amps 1000V 14 Rds
IXTP110N055T2

Mfr.#: IXTP110N055T2

OMO.#: OMO-IXTP110N055T2

MOSFET 110 Amps 55V 0.0066 Rds
IXTP102N15T

Mfr.#: IXTP102N15T

OMO.#: OMO-IXTP102N15T

MOSFET 102 Amps 150V 18 Rds
IXTP15P15T

Mfr.#: IXTP15P15T

OMO.#: OMO-IXTP15P15T

MOSFET TenchP Power MOSFET
IXTP1R6N50D2

Mfr.#: IXTP1R6N50D2

OMO.#: OMO-IXTP1R6N50D2

MOSFET N-CH MOSFETS (D2) 500V 1.6A
IXTP182N055T

Mfr.#: IXTP182N055T

OMO.#: OMO-IXTP182N055T-IXYS-CORPORATION

MOSFET N-CH 55V 182A TO-220
IXTP15N50L2

Mfr.#: IXTP15N50L2

OMO.#: OMO-IXTP15N50L2-IXYS-CORPORATION

Darlington Transistors MOSFET LINEAR L2 SERIES MOSFET 500V 15A
IXTP1N120P

Mfr.#: IXTP1N120P

OMO.#: OMO-IXTP1N120P-IXYS-CORPORATION

Darlington Transistors MOSFET 1 Amps 1200V 20 Rds
IXTP1N80P

Mfr.#: IXTP1N80P

OMO.#: OMO-IXTP1N80P-IXYS-CORPORATION

IGBT Transistors MOSFET Polar Power Mosfet 800V 1A
IXTP1R4N120P

Mfr.#: IXTP1R4N120P

OMO.#: OMO-IXTP1R4N120P-IXYS-CORPORATION

MOSFET 1.4 Amps 1200V 15 Rds
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de IXTP12N65X2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,34 US$
3,34 US$
10
3,03 US$
30,30 US$
25
2,63 US$
65,75 US$
50
2,47 US$
123,50 US$
100
2,43 US$
243,00 US$
250
1,97 US$
492,50 US$
500
1,89 US$
945,00 US$
1000
1,57 US$
1 570,00 US$
2500
1,32 US$
3 300,00 US$
Empezar con
Nuevos productos
Top