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| PartNumber | IRFHS8342TRPBF | IRFHS8342TRPBF. | IRFHS8342TRPBF-CUT TAPE |
| Description | MOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC | N CHANNEL MOSFET, 30V, 8.8A, 6-PQFN | |
| Manufacturer | Infineon | IR | - |
| Product Category | MOSFET | IC Chips | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-6 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 19 A | - | - |
| Rds On Drain Source Resistance | 25 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 4.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 2 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 18 S | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 5.2 ns | - | - |
| Typical Turn On Delay Time | 5.9 ns | - | - |
| Part # Aliases | SP001556608 | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFHS8342TRPBF | MOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC | |
| IRFHS8342TRPBF | MOSFET N-CH 30V 8.8A PQFN | ||
| IRFHS8342TRPBF. | N CHANNEL MOSFET, 30V, 8.8A, 6-PQFN | ||
| IRFHS8342TRPBF-CUT TAPE | Nuevo y original |