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IRFHS8342TRPBF

IRFHS8342TRPBF
Mfr. #:
IRFHS8342TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 30V 8.8A PQFN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRFHS8342TRPBF Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IRFHS8342TRPBF más información
Atributo del producto
Valor de atributo
Fabricante
IOR
categoria de producto
FET - Single
embalaje
Carrete
Estilo de montaje
SMD / SMT
Paquete-Estuche
PQFN-6
Tecnología
Si
Número de canales
1 Channel
Configuración
Drenaje cuádruple simple de doble fuente
Tipo transistor
1 N-Channel
Disipación de potencia Pd
2.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
5 ns
Hora de levantarse
15 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
19 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.35 V to 2.35 V
Resistencia a la fuente de desagüe de Rds
25 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
5.2 ns
Tiempo de retardo de encendido típico
5.9 ns
Qg-Gate-Charge
4.2 nC
Transconductancia directa-Mín.
18 S
Modo de canal
Mejora
Tags
IRFHS8342TRP, IRFHS83, IRFHS8, IRFHS, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 16 mOhm 4.2 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package, PG-TSDSON-6, RoHS
***et
Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: PQFN-6 (2x2) Polarity: N Variants: Enhancement mode Power dissipation: 2.1 W
***ment14 APAC
N CH MOSFET, 30V, 8.8A, 6-PQFN; Transist; N CH MOSFET, 30V, 8.8A, 6-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:6
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.0 mm); Compatible with Existing Surface Mount Techniques; Low Junction to PCB Thermal Resistance; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; DC Switches; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Ultra Compact PQFN HEXFET® Power MOSFETs
Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. These Ultra Compact PQFN HEXFET® Power MOSFETs come in a 2x2mm package and are available in 20 V, 25 V and 30 V with standard or logic level gate drive. They utilize Infineon latest low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density.Learn More
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
Parte # Mfg. Descripción Valores Precio
IRFHS8342TRPBF
DISTI # V72:2272_13890776		Infineon Technologies AGTrans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R4000
  • 3000:$0.1407
  • 1000:$0.1563
  • 500:$0.2039
  • 250:$0.2062
  • 100:$0.2082
  • 25:$0.3454
  • 10:$0.3747
  • 1:$0.4141
IRFHS8342TRPBF
DISTI # IRFHS8342TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 8.8A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7960In Stock
  • 1000:$0.1974
  • 500:$0.2555
  • 100:$0.3484
  • 10:$0.4650
  • 1:$0.5500
IRFHS8342TRPBF
DISTI # IRFHS8342TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.8A PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7960In Stock
  • 1000:$0.1974
  • 500:$0.2555
  • 100:$0.3484
  • 10:$0.4650
  • 1:$0.5500
IRFHS8342TRPBF
DISTI # IRFHS8342TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 8.8A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.1748
IRFHS8342TRPBF
DISTI # 30720999		Infineon Technologies AGTrans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R8000
  • 4000:$0.1373
IRFHS8342TRPBF
DISTI # 30334318		Infineon Technologies AGTrans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R4000
  • 3000:$0.1407
  • 1000:$0.1563
  • 500:$0.2039
  • 250:$0.2062
  • 100:$0.2082
  • 61:$0.3454
IRFHS8342TRPBF
DISTI # SP001556608		Infineon Technologies AGTrans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R (Alt: SP001556608)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 8000
  • 4000:€0.1999
  • 8000:€0.1549
  • 16000:€0.1269
  • 24000:€0.1069
  • 40000:€0.0999
IRFHS8342TRPBF
DISTI # IRFHS8342TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R - Tape and Reel (Alt: IRFHS8342TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1179
  • 8000:$0.1129
  • 16000:$0.1089
  • 24000:$0.1059
  • 40000:$0.1039
IRFHS8342TRPBF
DISTI # 25T5488		Infineon Technologies AGN CHANNEL MOSFET, 30V, 8.8A, 6-PQFN,Transistor Polarity:N Channel,Continuous Drain Current Id:8.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V RoHS Compliant: Yes12000
  • 1:$0.4690
  • 25:$0.3910
  • 50:$0.3200
  • 100:$0.2480
  • 250:$0.2310
  • 500:$0.2140
  • 1000:$0.1980
IRFHS8342TRPBFInfineon Technologies AGTRENCH_MOSFETS
RoHS: Compliant		50Cut Tape/Mini-Reel
  • 1:$0.2450
  • 250:$0.1690
  • 500:$0.1610
  • 1000:$0.1540
  • 2500:$0.1400
IRFHS8342TRPBF
DISTI # 942-IRFHS8342TRPBF		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC
RoHS: Compliant		3996
  • 1:$0.4400
  • 10:$0.3710
  • 100:$0.2260
  • 1000:$0.1750
  • 4000:$0.1490
IRFHS8342TRPBFInternational Rectifier 
RoHS: Compliant		Europe - 4000
    IRFHS8342TRPBF
    DISTI # C1S322000604586    		Infineon Technologies AGTrans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
    RoHS: Compliant    		8000
    • 8000:$0.1690
    • 4000:$0.1830
    IRFHS8342TRPBF
    DISTI # C1S322000595303    		Infineon Technologies AGTrans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 250:$0.2062
    • 100:$0.2082
    • 25:$0.3454
    IRFHS8342TRPBF
    DISTI # 2577166    		Infineon Technologies AGMOSFET, N-CH, 30V, 8.8A, PQFN-8
    RoHS: Compliant    		12000
    • 5:£0.3210
    • 25:£0.3050
    • 100:£0.1730
    • 250:£0.1530
    • 500:£0.1340
    IRFHS8342TRPBF
    DISTI # 2577166    		Infineon Technologies AGMOSFET, N-CH, 30V, 8.8A, PQFN-8
    RoHS: Compliant    		12000
    • 1:$0.7120
    • 10:$0.5870
    • 100:$0.3590
    • 1000:$0.2780
    • 4000:$0.2370
    IRFHS8342TRPBF.
    DISTI # 1866995    		Infineon Technologies AGN CHANNEL MOSFET, 30V, 8.8A, 6-PQFN
    RoHS: Compliant    		0
    • 1:$0.7120
    • 10:$0.5870
    • 100:$0.3590
    • 1000:$0.2780
    • 4000:$0.2370
    Imagen Parte # Descripción
    IRFHS8342TRPBF

    Mfr.#: IRFHS8342TRPBF

    OMO.#: OMO-IRFHS8342TRPBF

    		 MOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC
    IRFHS8342TR2PBF

    Mfr.#: IRFHS8342TR2PBF

    OMO.#: OMO-IRFHS8342TR2PBF

    		 MOSFET MOSFT 30V 8.5A 16mOhm 4.2 Qg
    IRFHS8342TRPBF.

    Mfr.#: IRFHS8342TRPBF.

    OMO.#: OMO-IRFHS8342TRPBF--1190

    		 N CHANNEL MOSFET, 30V, 8.8A, 6-PQFN
    IRFHS8342TRPBF-CUT TAPE

    Mfr.#: IRFHS8342TRPBF-CUT TAPE

    OMO.#: OMO-IRFHS8342TRPBF-CUT-TAPE-1190

    		 Nuevo y original
    IRFHS8342TR2PBF

    Mfr.#: IRFHS8342TR2PBF

    OMO.#: OMO-IRFHS8342TR2PBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 8.8A PQFN
    IRFHS8342TRPBF

    Mfr.#: IRFHS8342TRPBF

    OMO.#: OMO-IRFHS8342TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 8.8A PQFN
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IRFHS8342TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,15 US$
    0,15 US$
    10
    0,15 US$
    1,47 US$
    100
    0,14 US$
    13,91 US$
    500
    0,13 US$
    65,65 US$
    1000
    0,12 US$
    123,60 US$
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