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| PartNumber | IRF7341GTRPBF | IRF7341PBF | IRF7341QTRPBF |
| Description | MOSFET PLANAR_MOSFETS | MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS | MOSFET 2N-CH 55V 5.1A 8-SOIC |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | MOSFET | MOSFET | FETs - Arrays |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 5.1 A | 4.7 A | - |
| Rds On Drain Source Resistance | 65 mOhms, 65 mOhms | 65 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 29 nC, 29 nC | 24 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 150 C | - |
| Pd Power Dissipation | 2.4 W | 2 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Tube | Digi-ReelR |
| Height | 1.75 mm | 1.75 mm | - |
| Length | 4.9 mm | 4.9 mm | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 3.9 mm | 3.9 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 10.4 S, 10.4 S | - | - |
| Fall Time | 12.5 ns, 12.5 ns | 13 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 7.7 ns, 7.7 ns | 3.2 ns | - |
| Factory Pack Quantity | 4000 | 3800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 31 ns, 31 ns | 32 ns | - |
| Typical Turn On Delay Time | 9.2 ns, 9.2 ns | 8.3 ns | - |
| Part # Aliases | SP001563394 | SP001577408 | - |
| Unit Weight | 0.017870 oz | 0.019048 oz | - |
| Type | - | Power MOSFET | - |
| Series | - | - | HEXFETR |
| Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | 8-SO |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 2.4W |
| Drain to Source Voltage Vdss | - | - | 55V |
| Input Capacitance Ciss Vds | - | - | 780pF @ 25V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 5.1A |
| Rds On Max Id Vgs | - | - | 50 mOhm @ 5.1A, 10V |
| Vgs th Max Id | - | - | 1V @ 250μA |
| Gate Charge Qg Vgs | - | - | 44nC @ 10V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
IRF7341TRPBF | MOSFET MOSFT DUAL NCh 55V 4.7A | |
| IRF7341GTRPBF | MOSFET PLANAR_MOSFETS | ||
| IRF7341PBF | MOSFET 55V DUAL N-CH HEXFET 20V VGS -55V BVDSS | ||
Infineon Technologies |
IRF7341GTRPBF | MOSFET N-CH 55V 5.1A | |
| IRF7341PBF | Trans MOSFET N-CH Si 55V 4.7A 8-Pin SOIC Tube | ||
| IRF7341QTRPBF | MOSFET 2N-CH 55V 5.1A 8-SOIC | ||
| IRF7341TRPBF | MOSFET 2N-CH 55V 4.7A 8-SOIC | ||
| IRF7341TRPBF-CUT TAPE | Nuevo y original | ||
| IRF7341Q | POWER FIELD-EFFECT TRANSISTOR, 5.1A I(D), 55V, 0.05OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | ||
| IRF7341 | MOSFET Transistor, Matched Pair, N-Channel, SO | ||
| IRF7341ITRPBF | MOSFET SO-8 | ||
| IRF7341QPBF | MOSFET, Power, Dual N-Ch, VDSS 55V, RDS(ON) 0.05Ohm, ID 5.1A, SO-8, PD 2.4W, VGS +/-20V | ||
| IRF7341TR | MOSFET, DUAL N CH, 55V, 4.7A, SOIC-8 | ||
| IRF7341TRPBF/IRF7341QTR | Nuevo y original |