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IRF7341QPBF

IRF7341QPBF
Mfr. #:
IRF7341QPBF
Fabricante:
IR
Descripción:
MOSFET, Power, Dual N-Ch, VDSS 55V, RDS(ON) 0.05Ohm, ID 5.1A, SO-8, PD 2.4W, VGS +/-20V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF7341QPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
Chips de IC
Tags
IRF7341Q, IRF7341, IRF734, IRF73, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, Power;Dual N-Ch;VDSS 55V;RDS(ON) 0.05Ohm;ID 5.1A;SO-8;PD 2.4W;VGS +/-20V
***roFlash
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, NN SO-8; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:55V; Current, Id Cont:5.1A; On State Resistance:0.043ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:42A; Power Dissipation Pd:1.7W; Voltage, Vds:55V; Voltage, Vds Max:55V
***ure Electronics
DMP4050SSS Series 40 V 4.4 A P-Channel Enhancement Mode Mosfet - SOIC-8
***el Electronic
Dual nano power high-voltage comparator with open-drain output 8-SOIC 0 to 70
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: P Variants: Enhancement mode Power dissipation: 1.56 W
***et
Transistor MOSFET Array Dual N-CH 40V 7.1A 8-Pin SOIC T/R
***ure Electronics
Dual N-Channel 40 V 0.047 Ohm 6.3 nC 2.14 W Silicon SMT Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET N-Channel 40V 7.1A SOIC8
***ical
Trans MOSFET N-CH 40V 5.4A Automotive 8-Pin SO T/R
***ark
Mosfet, Dual, N-Ch, 40V, 5.4A Rohs Compliant: Yes
***des Inc SCT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
***ment14 APAC
MOSFET, DUAL, N-CH, 40V, 5.4A;
***et
Transistor MOSFET Array Dual P-CH 40V 5.2A 8-Pin SOIC T/R
***ure Electronics
DMP4050SSD Series 40 V 4 A Dual P-Channel Enhancement Mode Mosfet - SOIC-8
***ical
Trans MOSFET P-CH 40V 5.2A Automotive 8-Pin SO T/R
***el Electronic
MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A
***des Inc SCT
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET, 40V VDS, 20±V VGS
***ark
Mosfet, Dual, P-Ch, 40V, 4A Rohs Compliant: Yes
***S
French Electronic Distributor since 1988
***(Formerly Allied Electronics)
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS +/-20V
***ure Electronics
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***(Formerly Allied Electronics)
IRF7490PBF N-channel MOSFET Transistor; 5.4 A; 100 V; 8-Pin SOIC
***ark
Mosfet Transistor, N Channel, 5.4 A, 100 V, 39 Mohm, 10 V, 4 V
***ure Electronics
Single N-Channel 100 V 39 mOhm 56 nC HEXFET® Power Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 100V 5.4A 8-Pin SOIC T/R - Tape and Reel
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 5.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 39 / Gate-Source Voltage V = 20 / Fall Time ns = 11 / Rise Time ns = 4.2 / Turn-OFF Delay Time ns = 51 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
***ical
Trans MOSFET N-CH 30V 5.8A 8-Pin SOIC T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.8A; On Resistance, Rds(on):35mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IRF7341QPBF
DISTI # 70017862		Infineon Technologies AGMOSFET,Power,Dual N-Ch,VDSS 55V,RDS(ON) 0.05Ohm,ID 5.1A,SO-8,PD 2.4W,VGS +/-20V
RoHS: Compliant		0
  • 760:$0.5700
IRF7341QPBF
DISTI # N/A		Infineon Technologies AGMOSFET SO-80
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    		 MOSFET N-Chan 400V 5.5 Amp
    IRF7316TRPBF

    Mfr.#: IRF7316TRPBF

    OMO.#: OMO-IRF7316TRPBF-INFINEON-TECHNOLOGIES

    		 MOSFET 2P-CH 30V 4.9A 8-SOIC
    IRF7311TRPBF.

    Mfr.#: IRF7311TRPBF.

    OMO.#: OMO-IRF7311TRPBF--1190

    		 Nuevo y original
    IRF7319TRPBF-CUT TAPE

    Mfr.#: IRF7319TRPBF-CUT TAPE

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    IRF7306QPBF

    Mfr.#: IRF7306QPBF

    OMO.#: OMO-IRF7306QPBF-1190

    		 MOSFET, Power, Dual P-Ch, VDSS -30V, RDS(ON) 0.1Ohm, ID -3.6A, SO-8, PD 2W, VGS +/-20V
    IRF7335D1

    Mfr.#: IRF7335D1

    OMO.#: OMO-IRF7335D1-1190

    		 INSTOCK
    IRF7335D1TRPBF

    Mfr.#: IRF7335D1TRPBF

    OMO.#: OMO-IRF7335D1TRPBF-1190

    		 INSTOCK
    IRF7341

    Mfr.#: IRF7341

    OMO.#: OMO-IRF7341-1190

    		 MOSFET Transistor, Matched Pair, N-Channel, SO
    IRF7350

    Mfr.#: IRF7350

    OMO.#: OMO-IRF7350-1190

    		 2.1 A, 100 V, 0.21 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
    IRF7328PBF

    Mfr.#: IRF7328PBF

    OMO.#: OMO-IRF7328PBF-INFINEON-TECHNOLOGIES

    		 Darlington Transistors MOSFET DUAL -30V P-CH 20V VGS MAX
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de IRF7341QPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,86 US$
    0,86 US$
    10
    0,81 US$
    8,12 US$
    100
    0,77 US$
    76,95 US$
    500
    0,73 US$
    363,40 US$
    1000
    0,68 US$
    684,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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