IRF6678

IRF6678TR1PBF vs IRF6678 vs IRF6678TR1

 
PartNumberIRF6678TR1PBFIRF6678IRF6678TR1
DescriptionMOSFET 30V N-CH HEXFET 2.2mOhms 43nCMOSFET N-CH 30V 30A DIRECTFETMOSFET N-CH 30V 30A DIRECTFET
ManufacturerInfineon-IRF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDirectFET-MX--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance3 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge43 nC--
Pd Power Dissipation89 W--
ConfigurationSingle--
PackagingReel--
Height0.7 mm--
Length6.35 mm--
Transistor Type1 N-Channel--
Width5.05 mm--
BrandInfineon / IR--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Part # AliasesSP001525486--
Unit Weight0.017637 oz--
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6678TR1PBF MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Infineon Technologies
Infineon Technologies
IRF6678 MOSFET N-CH 30V 30A DIRECTFET
IRF6678TR1PBF MOSFET N-CH 30V 30A DIRECTFET
IRF6678TR1 MOSFET N-CH 30V 30A DIRECTFET
IRF6678TRPBF MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Top