IRF667

IRF6674TRPBF vs IRF6674TR1PBF vs IRF6678

 
PartNumberIRF6674TRPBFIRF6674TR1PBFIRF6678
DescriptionMOSFET 60V 1 N-CH HEXFET 11mOhms 24nCMOSFET MOSFT 60V 67A 11.2mOhm 25nC QgMOSFET N-CH 30V 30A DIRECTFET
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MZDirectFET-MZ-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current67 A67 A-
Rds On Drain Source Resistance9 mOhms9 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge24 nC24 nC-
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation89 W89 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameDirectFET--
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Fall Time8.7 ns8.7 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time12 ns12 ns-
Factory Pack Quantity48001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time12 ns--
Typical Turn On Delay Time7 ns--
Part # AliasesSP001564538SP001571484-
Vgs th Gate Source Threshold Voltage-4.9 V-
Forward Transconductance Min-16 S-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF6674TRPBF MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
IRF6674TR1PBF MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
IRF6678TR1PBF MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Infineon Technologies
Infineon Technologies
IRF6678 MOSFET N-CH 30V 30A DIRECTFET
IRF6678TR1PBF MOSFET N-CH 30V 30A DIRECTFET
IRF6678TR1 MOSFET N-CH 30V 30A DIRECTFET
IRF6674TRPBF IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
IRF6674TR1PBF IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
IRF6678TRPBF MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
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