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IRF6678TRPBF

IRF6678TRPBF
Mfr. #:
IRF6678TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF6678TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET - Single
Tags
IRF6678T, IRF6678, IRF667, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX packag
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***(Formerly Allied Electronics)
A 30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE IN THE DIRECTFET MT PACKAG
*** Source Electronics
Trans MOSFET N-CH Si 30V 30A 7-Pin Direct-FET MT T/R / MOSFET N-CH 30V 30A DIRECTFET
***ure Electronics
Single N-Channel 30 V 3.4 mOhm 65 nC HEXFET® Power Mosfet - DirectFET®
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N-CH, 30V, 170A, DIRECTFET MT-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.64V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MT; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE, DIRECTFET MT
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N, DIRECTFET, 30V, MT; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:30A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; Termination Type:SMD; Base Number:6618; Current, Idm Pulse:240A; Marking, SMD:2.8; Power Dissipation:2.8mW; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V
***ure Electronics
Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31
***ark
N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
***p One Stop Global
Trans MOSFET N-CH 30V 160A 8-Pin Power Flat EP T/R
***ure Electronics
N-Channel 30 V 2.1 mOhm SMT Power MOSFET - PowerFLAT™5x6
***icroelectronics
N-channel 30 V, 0.0016 Ohm typ., 160 A STripFET H7 Power MOSFETs plus monolithic Schottky in a PowerFLAT 5x6 package
Parte # Mfg. Descripción Valores Precio
IRF6678TRPBF
DISTI # IRF6678TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		24In Stock
  • 10:$3.7110
  • 1:$4.1600
IRF6678TRPBF
DISTI # IRF6678TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		24In Stock
  • 10:$3.7110
  • 1:$4.1600
IRF6678TRPBF
DISTI # IRF6678TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Compliant
Min Qty: 4800
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6678TRPBF
    DISTI # 70019589    		Infineon Technologies AGA 30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE IN THE DIRECTFET MX PACKAG
    RoHS: Compliant    		0
    • 1:$3.9300
    • 2:$3.8510
    • 5:$3.7340
    • 10:$3.5760
    • 25:$3.3410
    IRF6678TRPBF
    DISTI # 942-IRF6678TRPBF    		Infineon Technologies AGMOSFET 30V N-CH HEXFET 2.2mOhms 43nC
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      IRF6674TRPBF

      Mfr.#: IRF6674TRPBF

      OMO.#: OMO-IRF6674TRPBF

      		 MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
      IRF6674TR1PBF

      Mfr.#: IRF6674TR1PBF

      OMO.#: OMO-IRF6674TR1PBF

      		 MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
      IRF6678TR1PBF

      Mfr.#: IRF6678TR1PBF

      OMO.#: OMO-IRF6678TR1PBF

      		 MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
      IRF6678

      Mfr.#: IRF6678

      OMO.#: OMO-IRF6678-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 30A DIRECTFET
      IRF6678TR1PBF

      Mfr.#: IRF6678TR1PBF

      OMO.#: OMO-IRF6678TR1PBF-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 30A DIRECTFET
      IRF6678TR1

      Mfr.#: IRF6678TR1

      OMO.#: OMO-IRF6678TR1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 30V 30A DIRECTFET
      IRF6674TRPBF

      Mfr.#: IRF6674TRPBF

      OMO.#: OMO-IRF6674TRPBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
      IRF6674TR1PBF

      Mfr.#: IRF6674TR1PBF

      OMO.#: OMO-IRF6674TR1PBF-INFINEON-TECHNOLOGIES

      		 IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
      IRF6678TRPBF

      Mfr.#: IRF6678TRPBF

      OMO.#: OMO-IRF6678TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
      Disponibilidad
      Valores:
      Available
      En orden:
      3000
      Ingrese la cantidad:
      El precio actual de IRF6678TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,68 US$
      3,68 US$
      10
      3,49 US$
      34,93 US$
      100
      3,31 US$
      330,89 US$
      500
      3,12 US$
      1 562,50 US$
      1000
      2,94 US$
      2 941,20 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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