 |  | | |
| PartNumber | IRF540PBF | IRF540P | IRF540PBF,IRF540 |
| Description | MOSFET N-CH 100V HEXFET MOSFET | ||
| Manufacturer | Vishay | VISHAY | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220AB-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 28 A | - | - |
| Rds On Drain Source Resistance | 77 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 72 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 150 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IRF | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 8.7 S | - | - |
| Fall Time | 43 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 44 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 53 ns | - | - |
| Typical Turn On Delay Time | 11 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF540PBF | MOSFET N-CH 100V HEXFET MOSFET | |
| IRF540P | Nuevo y original | ||
| IRF540PBF,IRF540 | Nuevo y original | ||
Vishay |
IRF540PBF | MOSFET N-CH 100V 28A TO-220AB |