 |  | | |
| PartNumber | IRF510PBF | IRF510S | IRF510 |
| Description | MOSFET N-CH 100V HEXFET MOSFET D2-PA | MOSFET RECOMMENDED ALT 844-IRF510SPBF | MOSFET RECOMMENDED ALT 844-IRF510PBF |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | N | N |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | - |
| Package / Case | TO-220AB-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 5.6 A | - | - |
| Rds On Drain Source Resistance | 540 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 43 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | Tube | Tube |
| Series | IRF | IRF | IRF |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 1.3 S | - | - |
| Fall Time | 9.4 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | - | - |
| Typical Turn On Delay Time | 6.9 ns | - | - |
| Unit Weight | 0.211644 oz | 0.050717 oz | 0.211644 oz |
| Height | - | 4.83 mm | - |
| Length | - | 10.67 mm | - |
| Width | - | 9.65 mm | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRF510PBF | MOSFET N-CH 100V HEXFET MOSFET D2-PA | |
| IRF510SPBF | MOSFET N-Chan 100V 5.6 Amp | ||
| IRF510STRLPBF | MOSFET N-CH 100V HEXFET MOSFET D2-PA | ||
| IRF510STRRPBF | MOSFET MOSFET N-CHANNEL 100V | ||
| IRF520 | MOSFET RECOMMENDED ALT 844-IRF520PBF | ||
| IRF510S | MOSFET RECOMMENDED ALT 844-IRF510SPBF | ||
| IRF510 | MOSFET RECOMMENDED ALT 844-IRF510PBF | ||
| IRF510STRL | MOSFET RECOMMENDED ALT 844-IRF510STRLPBF | ||
| IRF510STRLPBF-CUT TAPE | Nuevo y original | ||
| IRF5.2S | Nuevo y original | ||
| IRF50012 | Nuevo y original | ||
| IRF5025PBF | Nuevo y original | ||
| IRF50N | Nuevo y original | ||
| IRF50N06 | Nuevo y original | ||
| IRF510,IRF510PBF, | Nuevo y original | ||
| IRF510/ SIHF510 | Nuevo y original | ||
| IRF510A | MOSFET 100V .2 OHM 33W | ||
| IRF510N | Nuevo y original | ||
| IRF510NPBF | Nuevo y original | ||
| IRF510PBF,IRF510,F510 | Nuevo y original | ||
| IRF510PBF,IRF520NPBF, | Nuevo y original | ||
| IRF510S/ SIHF510S | Nuevo y original | ||
| IRF510STRPBF | Nuevo y original | ||
| IRF511 | MOSFET Transistor, N-Channel, TO-220AB | ||
| IRF5117827 | Nuevo y original | ||
| IRF511PBF | Nuevo y original | ||
| IRF511S | Nuevo y original | ||
| IRF512 | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IRF5120 | Nuevo y original | ||
| IRF5120PBF | Nuevo y original | ||
| IRF5120S | Nuevo y original | ||
| IRF513 | Nuevo y original | ||
| IRF513PBF | Nuevo y original | ||
| IRF513R | Nuevo y original | ||
| IRF520 ST | Nuevo y original | ||
| IRF520/ SIHF520 | Nuevo y original | ||
| IRF520A | MOSFET 9.2A 100V .4 OHM | ||
| IRF520FI | Nuevo y original | ||
| IRF520L | Nuevo y original | ||
Vishay |
IRF510STRL | MOSFET N-CH 100V 5.6A D2PAK | |
| IRF510 | MOSFET N-CH 100V 5.6A TO-220AB | ||
| IRF510L | MOSFET N-CH 100V 5.6A TO-262 | ||
| IRF510PBF | MOSFET N-CH 100V 5.6A TO-220AB | ||
| IRF510S | MOSFET N-CH 100V 5.6A D2PAK | ||
| IRF510SPBF | MOSFET N-CH 100V 5.6A D2PAK | ||
| IRF510STRR | MOSFET N-CH 100V 5.6A D2PAK | ||
| IRF510STRRPBF | MOSFET N-CH 100V 5.6A D2PAK | ||
| IRF510STRLPBF | IGBT Transistors MOSFET N-Chan 100V 5.6 Amp | ||
STMicroelectronics |
IRF520 | MOSFET N-CH 100V 9.2A TO-220AB | |
Infineon Technologies |
IRF520N | MOSFET N-CH 100V 9.7A TO-220AB |