IRF540PBF

Mfr. #:: IRF540PBF
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET N-CH 100V HEXFET MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRF540PBF Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
Pago:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF540PBF Datasheet IRF540PBF Datasheet (P4-P6)IRF540PBF Datasheet (P7-P9)
ECAD Model:

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: E

Tecnología:: Si

Estilo de montaje:: A través del orificio

Paquete / Caja:: TO-220AB-3

Número de canales:: 1 Channel

Polaridad del transistor:: Canal N

Vds - Voltaje de ruptura de drenaje-fuente:: 100 V

Id - Corriente de drenaje continua:: 28 A

Rds On - Resistencia de la fuente de drenaje:: 77 mOhms

Vgs th - Voltaje umbral puerta-fuente:: 2 V

Vgs - Voltaje puerta-fuente:: 10 V

Qg - Carga de puerta:: 72 nC

Temperatura mínima de funcionamiento:: - 55 C

Temperatura máxima de funcionamiento:: + 175 C

Pd - Disipación de energía:: 150 W

Configuración:: Único

Modo de canal:: Mejora

Embalaje:: Tubo

Altura:: 15.49 mm

Longitud:: 10.41 mm

Serie:: IRF

Tipo de transistor:: 1 N-Channel

Ancho:: 4.7 mm

Marca:: Vishay / Siliconix

Transconductancia directa - Mín .:: 8.7 S

Otoño:: 43 ns

Tipo de producto:: MOSFET

Hora de levantarse:: 44 ns

Cantidad de paquete de fábrica:: 50

Subcategoría:: MOSFET

Tiempo de retardo de apagado típico:: 53 ns

Tiempo típico de retardo de encendido:: 11 ns

Unidad de peso:: 0.211644 oz

Tags: IRF540P, IRF540, IRF54, IRF5, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF540PBF Descripción

***itex: Transistor: N-MOSFET; unipolar; 100V; 28A; 0.077ohm; 150W; -55+175 deg.C; THT; TO220

***ure Electronics: Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3

***fin: Transistor NPN IRF540/IRF540PBF INTERNATIONAL RECTIFIER RoHS Ampere=28 Volt=100 TO220

*** Source Electronics: Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB / MOSFET N-CH 100V 28A TO-220AB

*** electronic: Transistor MOSFET N-Ch. 28A/100V TO220

*** Stop Electro: Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 100V, 28A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:28A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:20V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-220AB;PD 130W;-55deg

***ure Electronics: Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-220-3

***fin: Transistor NPN Mos IRF540/IRF540N INTERNATIONAL RECTIFIER Ampere=28 V=100 TO220

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***id Electronics: Transistor MOSFET N-Ch. 33A/100V TO220 IRF 540 N PBF

***ow.cn: Trans MOSFET N-CH Si 100V 33A 3-Pin(3+Tab) TO-220AB Full-Pak Tube

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):44mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 130 W

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

*** Electronics: 100V 33A RDSON 44mOHM TO- 220AB IR IRF540N Interna tional Rectifier Descrip tion: MOSFET; N-Channel; 100 V (Min.); 33 A (Max.) ; 130 W (Max.); 11 ns (Ty p.)

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V

*** Source Electronics: Trans MOSFET N-CH Si 100V 36A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 36A TO-220AB

***ure Electronics: Single N-Channel 100 V 26.5 mOhm 42 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 92 W

*** Stop Electro: Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, 100V, 36A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:36A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:92W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:36A; Junction to Case Thermal Resistance A:1.64°C/W; On State resistance @ Vgs = 10V:26.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:92W; Power Dissipation Pd:92W; Pulse Current Idm:140A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***et: TO-220AB, SINGLE, N-CH, 100V, 36MOHM ULTRAFET TRENCH MOSFET

***ure Electronics: N-Channel 100 V 36 mOhm PowerTrench Mosfet - TO-220AB

***emi: N-Channel PowerTrench® MOSFET 100V, 32A, 36mΩ

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: TO-220 Polarity: N Power dissipation: 95 W

***et Europe: Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:100V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:95W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:32A; Package / Case:TO-220AB; Power Dissipation Pd:95W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***-Wing Technology: Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 28A Tc 121W Tc 100V -55C~175C TJ

***ter Electronics: N-CH/LL/100V/28A/0.052OHM@VGS=5V/Substitute of IRL540

***inecomponents.com: 100V N-Channel Logic Level A-FET / Substitute of IRL540

***S: French Electronic Distributor since 1988

***emi: Power MOSFET, N-Channel, QFET®, 100 V, 33 A, 52 mΩ, TO-220

***ure Electronics: N-Channel 100 V 0.052 Ohm Flange Mount Mosfet - TO-220

***et Europe: Trans MOSFET N-CH 100V 33A 3-Pin(3+Tab) TO-220AB Rail

***nell: MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 33A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation Pd

*** Stop Electro: Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***ark: N CH MOSFET, TRENCH AUTO, 100V, 75A, 3TO220AB; Transistor Polarity:N Channel; Co

***ical: Trans MOSFET N-CH 100V 23A Automotive 3-Pin(3+Tab) TO-220AB Tube

***peria: N-channel TrenchMOS standard level FET

*** Americas: STANDARD MARKING * HORIZONTAL, RAIL PACK

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRF540PBF DISTI # V36:1790_07434268	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	4959	5000:$0.5857 2500:$0.6114 1000:$0.6459 500:$0.7782 100:$0.8775 10:$1.0645 1:$1.2165
IRF540PBF DISTI # V99:2348_07434268	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	1000	5000:$0.5857 2500:$0.6114 1000:$0.6459 500:$0.7782 100:$0.8775 10:$1.0645 1:$1.2165
IRF540PBF DISTI # IRF540PBF-ND	Vishay Siliconix	MOSFET N-CH 100V 28A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	6537In Stock	1000:$0.8702 500:$1.0503 100:$1.3504 50:$1.5004 1:$1.8600
IRF540PBF DISTI # 31067789	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	11430	500:$0.6864 26:$0.7296
IRF540PBF DISTI # 31028806	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	4959	2500:$0.6114 1000:$0.6459 500:$0.7782 100:$0.8775 13:$1.0645
IRF540PBF DISTI # 31240670	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB RoHS: Compliant	1000	1000:$0.6459 500:$0.7782 100:$0.8775 12:$1.0645
IRF540PBF DISTI # IRF540PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB (Alt: IRF540PBF) RoHS: Compliant Min Qty: 1	Europe - 54919	1:€0.8209 10:€0.5889 25:€0.4779 50:€0.4219 100:€0.4159 500:€0.4089 1000:€0.4039
IRF540PBF DISTI # IRF540PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF540PBF) RoHS: Not Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$0.6909 10:$0.6749 25:$0.6589 50:$0.6329 100:$0.6029 500:$0.5899 1000:$0.5759
IRF540PBF DISTI # 63J7322	Vishay Intertechnologies	Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 63J7322) RoHS: Not Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$1.6600 10:$1.3700 25:$1.2800 50:$1.2100 100:$1.1300 500:$1.0700 1000:$1.0200
IRF540PBF DISTI # 63J7322	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 28A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	1739	1:$1.6600 10:$1.3700 25:$1.2800 50:$1.2100 100:$1.1300 500:$1.0700 1000:$1.0200 2500:$0.9930
IRF540PBF DISTI # 68X2853	Vishay Intertechnologies	MOSFET Transistor, N Channel, 28 A, 100 V, 77 mohm, 10 V, 4 V RoHS Compliant: Yes	14725	1:$1.6600 10:$1.3700 25:$1.2800 50:$1.2100 100:$1.1300 500:$1.0700 1000:$1.0200 2500:$0.9930
IRF540PBF. DISTI # 26AC0598	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 28A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:28A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: No	0	1:$1.6900 10:$1.4000 25:$1.3100 50:$1.2100 100:$1.1300 500:$1.0700 1000:$1.0200 2500:$0.9930
IRF540PBF DISTI # 70078851	Vishay Intertechnologies	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.077Ohm,ID 28A,TO-220AB,PD 150W,VGS +/-20V RoHS: Compliant	466	1:$1.6990 25:$1.6420 100:$1.5040 250:$1.3900 500:$1.2850
IRF540PBF DISTI # 70459368	Vishay Siliconix	N-Chan 100V 28 Amp RoHS: Compliant	0	1000:$3.6460 2000:$2.9060
IRF540PBF DISTI # 844-IRF540PBF	Vishay Intertechnologies	MOSFET N-Chan 100V 28 Amp RoHS: Compliant	9354	1:$1.6600 10:$1.3700 100:$1.0500 500:$0.8980 1000:$0.7090 2500:$0.6620 5000:$0.6290 10000:$0.6050
IRF540PBF	Vishay Intertechnologies	Single N-Channel 100 V 0.077 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant	17026Tube	15:$0.7600 500:$0.7150
IRF540PBF	International Rectifier		30
IRF540PBF	Vishay Intertechnologies		218
IRF540PBF DISTI # 7085143	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 28A TO220AB, PK	3045	5:£1.2800 25:£1.0260
IRF540PBF DISTI # 9190020	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 28A TO220AB, TU	150	50:£0.7000 250:£0.5950 1000:£0.5250 2500:£0.4730
IRF540PBF DISTI # IRF540PBF	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,100V,20A,150W,TO220AB	2013	1:$0.6800 5:$0.6500 25:$0.5900 100:$0.5300 500:$0.4800
IRF540PBF DISTI # IRF540PBF	Vishay Intertechnologies	N-Ch 100V 28A 150W 0,077R TO220AB RoHS: Compliant	6025	25:€0.5430 100:€0.4630 300:€0.4230 500:€0.4070
IRF540PBF DISTI # TMOSP8839	Vishay Intertechnologies	N-CH 100V28A77mOhm TO220-3 RoHS: Compliant	Stock DE - 0Stock US - 0	1000:$0.4820
IRF540PBF DISTI # 1653661	Vishay Intertechnologies	MOSFET, N, 100V, 28A, TO-220 RoHS: Compliant	15009	5:£1.1600 25:£0.7210 100:£0.6670 250:£0.6130 500:£0.5500
IRF540PBF DISTI # C1S803600853625	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4693	1000:$0.6459 500:$0.7782 100:$0.8775 10:$1.0645
IRF540PBF DISTI # C1S803600788853	Vishay Intertechnologies	MOSFETs RoHS: Compliant	11430	1000:$0.6220 500:$0.6720 100:$0.7490 50:$0.8910 25:$0.9990 5:$1.3700
IRF540PBF DISTI # XSLY00000005576	Vishay Intertechnologies	TO-220AB RoHS: Compliant	8352	1150:$0.6143 8352:$0.5733
IRF540PBF DISTI # XSKDRABV0021361	VI1	RoHS: Compliant	42422	1000:$0.8545 42422:$0.7833
IRF540PBF DISTI # XSFP00000007083	Vishay Siliconix	RoHS: Compliant	20701	150:$1.5200 20701:$1.3800
IRF540PBF	Vishay Intertechnologies	MOSFET N-Chan 100V 28 Amp RoHS: Compliant	Americas - 11400	50:$0.6600 100:$0.5840 250:$0.5310 500:$0.5190 1000:$0.4910
IRF540PBF DISTI # 1653661	Vishay Intertechnologies	MOSFET, N, 100V, 28A, TO-220 RoHS: Compliant	15002	1:$2.6300 10:$2.1700 100:$1.6600 500:$1.4200 1000:$1.1300 2500:$1.0500 5000:$0.9960 10000:$0.9580

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: INA132U/2K5 OMO.#: OMO-INA132U-2K5	Differential Amplifiers Low Pwr Single-Supply
	Mfr.#: IR2110PBF OMO.#: OMO-IR2110PBF	Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd
	Mfr.#: BAV199LT1G OMO.#: OMO-BAV199LT1G	Diodes - General Purpose, Power, Switching 70V 215mA
	Mfr.#: 1N4148 OMO.#: OMO-1N4148	Diodes - General Purpose, Power, Switching 100V Io/200mA BULK
	Mfr.#: 1N4148TR OMO.#: OMO-1N4148TR	Diodes - General Purpose, Power, Switching 100V Io/150mA T/R
	Mfr.#: IRF3205PBF OMO.#: OMO-IRF3205PBF	MOSFET MOSFT 55V 98A 8mOhm 97.3nC
	Mfr.#: IRF5210PBF OMO.#: OMO-IRF5210PBF	MOSFET MOSFT PCh -100V -40A 60mOhm 120nC
	Mfr.#: LM7805CT/NOPB OMO.#: OMO-LM7805CT-NOPB	Linear Voltage Regulators 5 Volt Reg
	Mfr.#: L7805ACV OMO.#: OMO-L7805ACV	Linear Voltage Regulators 5.0V 1.0A Positive
	Mfr.#: IR2110PBF OMO.#: OMO-IR2110PBF-INFINEON-TECHNOLOGIES	Gate Drivers Hi&Lw Sd Drvr All HiVlt Pins 1 Sd

Disponibilidad

Valores:: Available
En orden:: 1992
Ingrese la cantidad:

El precio actual de IRF540PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,65 US$~~; ~~1,65 US$~~

10: ~~1,36 US$~~; ~~13,60 US$~~

100: ~~1,04 US$~~; ~~104,00 US$~~

500: ~~0,90 US$~~; ~~448,50 US$~~

1000: ~~0,71 US$~~; ~~708,00 US$~~

2500: ~~0,66 US$~~; ~~1 652,50 US$~~

5000: ~~0,63 US$~~; ~~3 140,00 US$~~

10000: ~~0,60 US$~~; ~~6 040,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

IRF540P 3
IRF540 62
IRF54 81
IRF5 360
IRF 8615

Nuevos productos

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Compare IRF540PBF

IRF540P vs IRF540PBF vs IRF540PBFIRF540
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

IRF540PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes