IRF3709ZS

IRF3709ZSPBF vs IRF3709ZS vs IRF3709ZSTRL

 
PartNumberIRF3709ZSPBFIRF3709ZSIRF3709ZSTRL
DescriptionMOSFET 30V 1 N-CH 6.3mOhm HEXFET 17nCMOSFET N-CH 30V 87A D2PAKMOSFET N-CH 30V 87A D2PAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current87 A--
Rds On Drain Source Resistance7.8 mOhms--
Vgs th Gate Source Threshold Voltage2.25 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge17 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width9.25 mm--
BrandInfineon / IR--
Forward Transconductance Min88 S--
Fall Time4.7 ns--
Product TypeMOSFET--
Rise Time41 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16 ns--
Typical Turn On Delay Time13 ns--
Part # AliasesSP001551038--
Unit Weight0.139332 oz--
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IRF3709ZSTRRPBF MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
IRF3709ZS MOSFET N-CH 30V 87A D2PAK
IRF3709ZSTRL MOSFET N-CH 30V 87A D2PAK
IRF3709ZSTRR MOSFET N-CH 30V 87A D2PAK
IRF3709ZSTRLPBF MOSFET N-CH 30V 87A D2PAK
IRF3709ZSPBF MOSFET N-CH 30V 87A D2PAK
IRF3709ZSTRRPBF MOSFET N-CH 30V 87A D2PAK
Infineon / IR
Infineon / IR
IRF3709ZSPBF MOSFET 30V 1 N-CH 6.3mOhm HEXFET 17nC
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