 |  |  | |
| PartNumber | IRF3709PBF | IRF3709SPBF | IRF3709LPBF |
| Description | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-220-3 | TO-252-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 90 A | 90 A | 90 A |
| Rds On Drain Source Resistance | 10.5 mOhms | 10.5 mOhms | 10.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 27 nC | 27 nC | 27 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 120 W | 120 W | 120 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | 2.3 mm | 9.45 mm |
| Length | 10 mm | 6.5 mm | 10.2 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | Smps MOSFET | Smps MOSFET | Smps MOSFET |
| Width | 4.4 mm | 6.22 mm | 4.5 mm |
| Brand | Infineon / IR | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 53 S | - | - |
| Fall Time | 9.2 ns | 9.2 ns | 9.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 171 ns | 171 ns | 171 ns |
| Factory Pack Quantity | 1000 | 1000 | 3200 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 21 ns | 21 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
| Part # Aliases | SP001570060 | SP001571378 | SP001561748 |
| Unit Weight | 0.211644 oz | 0.139332 oz | 0.084199 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
IRF3709PBF | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | |
| IRF3709ZSPBF | MOSFET 30V 1 N-CH 6.3mOhm HEXFET 17nC | ||
| IRF3709SPBF | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | ||
| IRF3709LPBF | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | ||
| IRF3709ZLPBF | MOSFET 30V 1 N-CH HEXFET 6.3mOhms 17nC | ||
Infineon Technologies |
IRF3709ZSTRRPBF | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | |
| IRF3709STRLPBF | MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | ||
| IRF3709ZPBF | MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | ||
| IRF3709 | MOSFET N-CH 30V 90A TO-220AB | ||
| IRF3709L | MOSFET N-CH 30V 90A TO-262 | ||
| IRF3709LPBF | MOSFET N-CH 30V 90A TO-262 | ||
| IRF3709S | MOSFET N-CH 30V 90A D2PAK | ||
| IRF3709STRL | MOSFET N-CH 30V 90A D2PAK | ||
| IRF3709STRR | MOSFET N-CH 30V 90A D2PAK | ||
| IRF3709ZCL | MOSFET N-CH 30V 87A TO-262 | ||
| IRF3709ZCSTRL | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709ZCSTRR | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709ZL | MOSFET N-CH 30V 87A TO-262 | ||
| IRF3709ZLPBF | MOSFET N-CH 30V 87A TO-262 | ||
| IRF3709ZS | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709ZSTRL | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709ZSTRR | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709STRRPBF | MOSFET N-CH 30V 90A D2PAK | ||
| IRF3709ZCLPBF | MOSFET N-CH 30V 87A TO-262 | ||
| IRF3709ZSTRLPBF | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709PBF | MOSFET N-CH 30V 90A TO-220AB | ||
| IRF3709ZCS | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709ZSPBF | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709ZPBF | Darlington Transistors MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg | ||
| IRF3709SPBF | IGBT Transistors MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | ||
| IRF3709STRLPBF | RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 9mOhms 27nC | ||
| IRF3709ZSTRRPBF | MOSFET N-CH 30V 87A D2PAK | ||
| IRF3709ZCSTRLP | Nuevo y original | ||
| IRF3709ZCSPBF | MOSFET, 30V, 87A, 6.3 MOHM, 17 NC QG, D2-PAK | ||
| IRF3709S,IRF3709SPBF | Nuevo y original | ||
| IRF3709Z | Nuevo y original | ||
| IRF3709ZCS,F3709ZCS | Nuevo y original |