IRF3709ZSTRRPBF

IRF3709ZSTRRPBF
Mfr. #:
IRF3709ZSTRRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF3709ZSTRRPBF Ficha de datos
Entrega:
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HTML Datasheet:
IRF3709ZSTRRPBF DatasheetIRF3709ZSTRRPBF Datasheet (P4-P6)IRF3709ZSTRRPBF Datasheet (P7-P9)IRF3709ZSTRRPBF Datasheet (P10-P12)IRF3709ZSTRRPBF Datasheet (P13)
ECAD Model:
Más información:
IRF3709ZSTRRPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
87 A
Rds On - Resistencia de la fuente de drenaje:
7.8 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
17 nC
Pd - Disipación de energía:
79 W
Configuración:
Único
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Parte # Alias:
SP001563134
Unidad de peso:
0.139332 oz
Tags
IRF3709ZST, IRF3709ZS, IRF3709Z, IRF3709, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - D2PAK
*** Source Electronics
Trans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 30V 87A D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:87A; On Resistance, Rds(on):6.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descripción Valores Precio
IRF3709ZSTRRPBF
DISTI # V72:2272_13890152
Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
2258
  • 1000:$0.5349
  • 500:$0.5943
  • 250:$0.8585
  • 100:$0.9240
  • 25:$1.0717
  • 10:$1.1021
  • 1:$1.2458
IRF3709ZSTRRPBF
DISTI # IRF3709ZSTRRPBF-ND
Infineon Technologies AGMOSFET N-CH 30V 87A D2PAK
RoHS: Compliant
Min Qty: 3200
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3200:$0.7392
IRF3709ZSTRRPBF
DISTI # 31589370
Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
2258
  • 1000:$0.5349
  • 500:$0.5943
  • 250:$0.8585
  • 100:$0.9240
  • 25:$1.0717
  • 12:$1.1021
IRF3709ZSTRRPBF
DISTI # IRF3709ZSTRRPBF
Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF3709ZSTRRPBF)
RoHS: Compliant
Min Qty: 3200
Container: Reel
Americas - 0
  • 3200:$0.5529
  • 4800:$0.5329
  • 8000:$0.5139
  • 16000:$0.4959
  • 32000:$0.4869
IRF3709ZSTRRPBF
DISTI # 70019545
Infineon Technologies AGMOSFET,30V,87A,6.3 MOHM,17 NC QG,D2-PAK
RoHS: Compliant
0
  • 3200:$1.0840
  • 6400:$1.0620
  • 16000:$1.0300
IRF3709ZSTRRPBF
DISTI # 942-IRF3709ZSTRRPBF
Infineon Technologies AGMOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
RoHS: Compliant
0
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9130
  • 800:$0.7200
IRF3709ZSTRRPBF
DISTI # C1S322000705496
Infineon Technologies AGMOSFETs
RoHS: Compliant
2258
  • 800:$0.5574
Imagen Parte # Descripción
BZV55-C15,115

Mfr.#: BZV55-C15,115

OMO.#: OMO-BZV55-C15-115

Zener Diodes DIODE ZENER 5 PCT TAPE-7
BBS-120-G-A

Mfr.#: BBS-120-G-A

OMO.#: OMO-BBS-120-G-A

Headers & Wire Housings 0.1in Standard Single Row, Screw Machine Terminal Strip
BBS-120-G-A

Mfr.#: BBS-120-G-A

OMO.#: OMO-BBS-120-G-A-SAMTEC

Conn Unshrouded Header HDR 20 POS 2.54mm Solder ST Thru-Hole Tube
BZV55-C15,115

Mfr.#: BZV55-C15,115

OMO.#: OMO-BZV55-C15-115-NEXPERIA

Zener Diodes DIODE ZENER 5 PCT TAPE-7
Disponibilidad
Valores:
775
En orden:
2758
Ingrese la cantidad:
El precio actual de IRF3709ZSTRRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,57 US$
1,57 US$
10
1,34 US$
13,40 US$
100
1,03 US$
103,00 US$
500
0,91 US$
456,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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