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IRF3709ZPBF

IRF3709ZPBF
Mfr. #:
IRF3709ZPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF3709ZPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF3709ZPBF DatasheetIRF3709ZPBF Datasheet (P4-P6)IRF3709ZPBF Datasheet (P7-P9)IRF3709ZPBF Datasheet (P10-P12)IRF3709ZPBF Datasheet (P13)
ECAD Model:
Más información:
IRF3709ZPBF más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
87 A
Rds On - Resistencia de la fuente de drenaje:
7.8 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
17 nC
Pd - Disipación de energía:
79 W
Configuración:
Único
Embalaje:
Tubo
Altura:
15.65 mm
Longitud:
10 mm
Tipo de transistor:
1 N-Channel
Ancho:
4.4 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
SP001564614
Unidad de peso:
0.211644 oz
Tags
IRF3709Z, IRF3709, IRF370, IRF37, IRF3, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 87A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.25V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Base Number: 3709; Current Id Max: 87A; N-channel Gate Charge: 17nC; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pulse Current Idm: 350A; Termination Type: Through Hole; Voltage Vds Typ: 30V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.25V; Voltage Vgs th Min: 1.35V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descripción Valores Precio
IRF3709ZPBF
DISTI # V99:2348_13890148		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		100
  • 1000:$0.5984
  • 500:$0.7080
  • 100:$0.7860
  • 10:$0.9751
  • 1:$1.0966
IRF3709ZPBF
DISTI # IRF3709ZPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 87A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		2198In Stock
  • 1000:$0.7117
  • 500:$0.9014
  • 100:$1.1624
  • 10:$1.4710
  • 1:$1.6600
IRF3709ZPBF
DISTI # 30719910		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		3250
  • 1000:$0.6211
  • 500:$0.7872
  • 100:$0.8909
  • 23:$1.1616
IRF3709ZPBF
DISTI # 26198111		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		100
  • 100:$0.7860
  • 14:$0.9751
IRF3709ZPBF
DISTI # SP001564614		Infineon Technologies AGTrans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB (Alt: SP001564614)
RoHS: Compliant
Min Qty: 1		Europe - 900
  • 1:€1.2149
  • 10:€1.0439
  • 25:€1.0409
  • 50:€1.0379
  • 100:€0.7929
  • 500:€0.7009
  • 1000:€0.5529
IRF3709ZPBF
DISTI # 70017980		Infineon Technologies AGIRF3709ZPBF N-channel MOSFET Transistor,87 A,30 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 500:$2.4500
IRF3709ZPBFInternational RectifierPower Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RoHS: Compliant		200
  • 1000:$0.5700
  • 500:$0.6000
  • 100:$0.6200
  • 25:$0.6500
  • 1:$0.7000
IRF3709ZPBF
DISTI # 942-IRF3709ZPBF		Infineon Technologies AGMOSFET MOSFT 30V 87A 6.3mOhm 17nC Qg
RoHS: Compliant		1618
  • 1:$1.4200
  • 10:$1.2100
  • 100:$0.9280
  • 500:$0.8200
  • 1000:$0.6470
IRF3709ZPBFInternational Rectifier42 A, 30 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB480
  • 257:$1.8000
  • 90:$1.9500
  • 1:$4.5000
IRF3709ZPBFInternational Rectifier42 A, 30 V, 0.0063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB100
  • 90:$1.9500
  • 9:$2.2500
  • 1:$4.5000
IRF3709ZPBF
DISTI # 6886847		Infineon Technologies AGMOSFET N-CHANNEL 30V 87A HEXFET TO220AB, PK90
  • 5:£1.0920
  • 25:£0.8740
  • 50:£0.7740
  • 100:£0.6720
  • 250:£0.6580
IRF3709ZPBFInternational Rectifier 1275
    IRF3709ZPBF
    DISTI # IRF3709ZPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,87A,79W,TO220AB194
    • 1:$0.9300
    • 3:$0.8300
    • 10:$0.6700
    • 50:$0.6100
    IRF3709ZPBF
    DISTI # IRF3709ZPBF    		Infineon Technologies AGN-Ch 30V 42A 79W 0,0063R TO220AB
    RoHS: Compliant    		230
    • 10:€0.7285
    • 50:€0.4885
    • 200:€0.4285
    • 500:€0.4125
    IRF3709ZPBFInternational Rectifier 
    RoHS: Compliant    		Europe - 45
      IRF3709ZPBF
      DISTI # 1436943      		Infineon Technologies AGMOSFET, N, 30V, TO-220AB
      RoHS: Compliant      		0
      • 1:$2.2500
      • 10:$1.9200
      • 100:$1.4700
      • 500:$1.3100
      • 1000:$1.0300
      IRF3709ZPBF
      DISTI # C1S322000480135      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		100
      • 100:$0.7860
      • 10:$0.9751
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      Disponibilidad
      Valores:
      Available
      En orden:
      1984
      Ingrese la cantidad:
      El precio actual de IRF3709ZPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,41 US$
      1,41 US$
      10
      1,20 US$
      12,00 US$
      100
      0,93 US$
      92,80 US$
      500
      0,82 US$
      410,00 US$
      1000
      0,65 US$
      647,00 US$
      2000
      0,57 US$
      1 148,00 US$
      10000
      0,55 US$
      5 530,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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