PartNumber | IPZ60R017C7XKSA1 | IPZ60R040C7XKSA1 | IPZ60R037P7XKSA1 |
Description | MOSFET | MOSFET HIGH POWER_NEW | MOSFET |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
Tradename | CoolMOS | CoolMOS | CoolMOS |
Packaging | Tube | Tube | Tube |
Series | CoolMOS C7 | CoolMOS C7 | CoolMOS P7 |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 240 | 240 | 240 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | IPZ60R017C7 SP001369912 | IPZ60R040C7 SP001296204 | IPZ60R037P7 SP001606064 |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-247-4 | TO-247-3 |
Height | - | 21.1 mm | - |
Length | - | 16.13 mm | - |
Width | - | 5.21 mm | - |
Unit Weight | - | 0.070548 oz | 0.211644 oz |
Number of Channels | - | - | 1 Channel |
Transistor Polarity | - | - | N-Channel |
Id Continuous Drain Current | - | - | 76 A |
Rds On Drain Source Resistance | - | - | 30 mOhms |
Vgs th Gate Source Threshold Voltage | - | - | 3 V |
Vgs Gate Source Voltage | - | - | 20 V |
Qg Gate Charge | - | - | 121 nC |
Minimum Operating Temperature | - | - | - 55 C |
Maximum Operating Temperature | - | - | + 150 C |
Pd Power Dissipation | - | - | 255 W |
Configuration | - | - | Single |
Channel Mode | - | - | Enhancement |
Transistor Type | - | - | 1 N-Channel |
Fall Time | - | - | 4 ns |
Rise Time | - | - | 10 ns |
Typical Turn Off Delay Time | - | - | 90 ns |
Typical Turn On Delay Time | - | - | 20 ns |